Authors: Selen, LJM Janssen, FJJ van IJzendoorn, LJ de Voigt, MJA Theunissen, MJJ Smulders, PJM Eijkemans, TJ

Citation: Ljm. Selen et al., Ion-channeling analysis of boron clusters in silicon, J APPL PHYS, 90(9), 2001, pp. 4741-4747

Authors: Selen, LJM van IJzendoorn, LJ van Loon, A de Voigt, MJA

Citation: Ljm. Selen et al., Channeling on boron clusters in silicon, J APPL PHYS, 90(10), 2001, pp. 5032-5037

Authors: Selen, LJM van IJzendoorn, LJ de Voigt, MJA Koenraad, PM

Citation: Ljm. Selen et al., Evidence for strain in and around InAs quantum dots in GaAs from ion-channeling experiments, PHYS REV B, 61(12), 2000, pp. 8270-8275

Authors: Selen, LJM Janssen, FJJ van IJzendoorn, LJ Theunissen, MJJ Smulders, PJM de Voigt, MJA

Citation: Ljm. Selen et al., Strain measurements in ultra-thin buried films (< 50 angstrom) with RBS ion channeling, NUCL INST B, 161, 2000, pp. 492-495

Authors: Jonkers, J Hartgers, A Selen, LJM van der Mullen, JAM Schram, DC

Citation: J. Jonkers et al., The influence of nitrogen entrainment on argon plasmas created by the 'Torche a Injection Axiale' (TIA), PLASMA SOUR, 8(1), 1999, pp. 49-57