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Results: 4
Proceedings of 18th Nordic Semiconductor meeting - Linkoping, Sweden, June7-10, 1998 - Preface
Authors:
Hansson, G Holtz, PO Sernelius, B
Citation:
G. Hansson et al., Proceedings of 18th Nordic Semiconductor meeting - Linkoping, Sweden, June7-10, 1998 - Preface, PHYS SCR, T79, 1999, pp. 7-7
Characteristics of Si delta-layers embedded in GaAs
Authors:
Pozina, G Holtz, PO Sernelius, B Buyanov, AV Radamson, HH Madsen, LD Monemar, B Thordson, J Andersson, TG
Citation:
G. Pozina et al., Characteristics of Si delta-layers embedded in GaAs, PHYS SCR, T79, 1999, pp. 99-102
Optical properties of p-type modulation doped GaAs/AlGaAs quantum wells
Authors:
Wongmanerod, S Holtz, PO Sernelius, B Reginski, K Bugajski, M Godlewski, M Mauritz, O Zhao, QX Bergman, JP Monemar, B
Citation:
S. Wongmanerod et al., Optical properties of p-type modulation doped GaAs/AlGaAs quantum wells, PHYS ST S-B, 210(2), 1998, pp. 615-620
Si delta-layers embedded in GaAs
Authors:
Holtz, PO Sernelius, B Buyanov, AV Pozina, G Radamson, HH Madsen, LD McCaffrey, JP Monemar, B Thordson, J Andersson, TG
Citation:
Po. Holtz et al., Si delta-layers embedded in GaAs, APPL PHYS L, 73(25), 1998, pp. 3709-3711
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