Authors:
Seutter, SM
Xie, MH
Zhu, WK
Zheng, LX
Wu, HS
Tong, SY
Citation: Sm. Seutter et al., Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy, SURF SCI, 445(2-3), 2000, pp. L71-L75
Authors:
Zheng, LX
Xie, MH
Seutter, SM
Cheung, SH
Tong, SY
Citation: Lx. Zheng et al., Observation of "ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy, PHYS REV L, 85(11), 2000, pp. 2352-2355
Authors:
Xie, MH
Seutter, SM
Zhu, WK
Zheng, LX
Wu, HS
Tong, SY
Citation: Mh. Xie et al., Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy, PHYS REV L, 82(13), 1999, pp. 2749-2752