Authors: Shapiro, NA Feick, H Gardner, NF Gotz, WK Waltereit, P Speck, JS Weber, ER

Citation: Na. Shapiro et al., Relation between structural parameters and the effective electron-hole separation in InGaN/GaN quantum wells, PHYS ST S-B, 228(1), 2001, pp. 147-151

Authors: Kim, Y Shapiro, NA Feick, H Armitage, R Weber, ER Yang, Y Cerrina, F

Citation: Y. Kim et al., Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth, APPL PHYS L, 78(7), 2001, pp. 895-897

Authors: Shapiro, NA Kim, Y Feick, H Weber, ER Perlin, P Yang, JW Akasaki, I Amano, H

Citation: Na. Shapiro et al., Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain, PHYS REV B, 62(24), 2000, pp. R16318-R16321

Authors: Perlin, P Mattos, L Shapiro, NA Kruger, J Wong, WS Sands, T Cheung, NW Weber, ER

Citation: P. Perlin et al., Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate, J APPL PHYS, 85(4), 1999, pp. 2385-2389

Authors: Perlin, P Subramanya, SG Mars, DE Kruger, J Shapiro, NA Siegle, H Weber, ER

Citation: P. Perlin et al., Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer, APPL PHYS L, 73(25), 1998, pp. 3703-3705