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Authors:
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Citation: S. Kaiser et al., Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors, J VAC SCI B, 18(2), 2000, pp. 733-740
Authors:
Green, BM
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Citation: Bm. Green et al., The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's, IEEE ELEC D, 21(6), 2000, pp. 268-270
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Citation: R. Dimitrov et al., Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors, SOL ST ELEC, 44(8), 2000, pp. 1361-1365
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Citation: R. Dimitrov et al., Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire, J APPL PHYS, 87(7), 2000, pp. 3375-3380
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Citation: Mj. Murphy et al., Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN GaN based heterostructures, J VAC SCI B, 17(3), 1999, pp. 1252-1254
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Ambacher, O
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Murphy, MJ
Smart, JA
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Citation: O. Ambacher et al., Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices, PHYS ST S-B, 216(1), 1999, pp. 381-389
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Citation: O. Ambacher et al., Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, J APPL PHYS, 85(6), 1999, pp. 3222-3233
Authors:
Smart, JA
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Citation: Ja. Smart et al., Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates, APPL PHYS L, 75(24), 1999, pp. 3820-3822