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Results: 1-18 |
Results: 18
Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)
Authors: Shealy, JB Smart, JA Shealy, JR
Citation: Jb. Shealy et al., Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs), IEEE MICR W, 11(6), 2001, pp. 244-245
Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
Authors: Martinez-Criado, G Cros, A Cantarero, A Ambacher, O Miskys, CR Dimitrov, R Stutzmann, M Smart, J Shealy, JR
Citation: G. Martinez-criado et al., Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures, J APPL PHYS, 90(9), 2001, pp. 4735-4740
Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
Authors: Chumbes, EM Smart, JA Prunty, T Shealy, JR
Citation: Em. Chumbes et al., Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates, IEEE DEVICE, 48(3), 2001, pp. 416-419
AlGaN/GaN high electron mobility transistors on Si(111) substrates
Authors: Chumbes, EM Schremer, AT Smart, JA Yang, Y MacDonald, NC Hogue, D Komiak, JJ Lichwalla, SJ Leoni, RE Shealy, JR
Citation: Em. Chumbes et al., AlGaN/GaN high electron mobility transistors on Si(111) substrates, IEEE DEVICE, 48(3), 2001, pp. 420-426
Undoped AlGaN/GaN HEMTs for microwave power amplification
Authors: Eastman, LF Tilak, V Smart, J Green, BM Chumbes, EM Dimitrov, R Kim, H Ambacher, OS Weimann, N Prunty, T Murphy, M Schaff, WJ Shealy, JR
Citation: Lf. Eastman et al., Undoped AlGaN/GaN HEMTs for microwave power amplification, IEEE DEVICE, 48(3), 2001, pp. 479-485
Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors
Authors: Kaiser, S Jakob, M Zweck, J Gebhardt, W Ambacher, O Dimitrov, R Schremer, AT Smart, JA Shealy, JR
Citation: S. Kaiser et al., Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors, J VAC SCI B, 18(2), 2000, pp. 733-740
Cascode connected AlGaN/GaN HEMT's on SiC substrates
Authors: Green, BM Chu, KK Smart, JA Tilak, V Kim, H Shealy, JR Eastman, LF
Citation: Bm. Green et al., Cascode connected AlGaN/GaN HEMT's on SiC substrates, IEEE MICR G, 10(8), 2000, pp. 316-318
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
Authors: Green, BM Chu, KK Chumbes, EM Smart, JA Shealy, JR Eastman, LF
Citation: Bm. Green et al., The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's, IEEE ELEC D, 21(6), 2000, pp. 268-270
Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors
Authors: Dimitrov, R Tilak, V Yeo, W Green, B Kim, H Smart, J Chumbes, E Shealy, JR Schaff, W Eastman, LF Miskys, C Ambacher, O Stutzmann, M
Citation: R. Dimitrov et al., Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors, SOL ST ELEC, 44(8), 2000, pp. 1361-1365
Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire
Authors: Dimitrov, R Murphy, M Smart, J Schaff, W Shealy, JR Eastman, LF Ambacher, O Stutzmann, M
Citation: R. Dimitrov et al., Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire, J APPL PHYS, 87(7), 2000, pp. 3375-3380
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Authors: Ambacher, O Foutz, B Smart, J Shealy, JR Weimann, NG Chu, K Murphy, M Sierakowski, AJ Schaff, WJ Eastman, LF Dimitrov, R Mitchell, A Stutzmann, M
Citation: O. Ambacher et al., Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, J APPL PHYS, 87(1), 2000, pp. 334-344
High electron mobility AlGaN/GaN heterostructure on (111) Si
Authors: Schremer, AT Smart, JA Wang, Y Ambacher, O MacDonald, NC Shealy, JR
Citation: At. Schremer et al., High electron mobility AlGaN/GaN heterostructure on (111) Si, APPL PHYS L, 76(6), 2000, pp. 736-738
Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructurefield-effect transistors
Authors: Garrido, JA Foutz, BE Smart, JA Shealy, JR Murphy, MJ Schaff, WJ Eastman, LF Munoz, E
Citation: Ja. Garrido et al., Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructurefield-effect transistors, APPL PHYS L, 76(23), 2000, pp. 3442-3444
Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN GaN based heterostructures
Authors: Murphy, MJ Chu, K Wu, H Yeo, W Schaff, WJ Ambacher, O Smart, J Shealy, JR Eastman, LF Eustis, TJ
Citation: Mj. Murphy et al., Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN GaN based heterostructures, J VAC SCI B, 17(3), 1999, pp. 1252-1254
Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices
Authors: Ambacher, O Dimitrov, R Stutzmann, M Foutz, BE Murphy, MJ Smart, JA Shealy, JR Weimann, NG Chu, K Chumbes, M Green, B Sierakowski, AJ Schaff, WJ Eastman, LF
Citation: O. Ambacher et al., Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices, PHYS ST S-B, 216(1), 1999, pp. 381-389
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Authors: Ambacher, O Smart, J Shealy, JR Weimann, NG Chu, K Murphy, M Schaff, WJ Eastman, LF Dimitrov, R Wittmer, L Stutzmann, M Rieger, W Hilsenbeck, J
Citation: O. Ambacher et al., Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, J APPL PHYS, 85(6), 1999, pp. 3222-3233
AlGaN GaN heterostructures on insulating AlGaN nucleation layers
Authors: Smart, JS Schremer, AT Weimann, NG Ambacher, O Eastman, LF Shealy, JR
Citation: Js. Smart et al., AlGaN GaN heterostructures on insulating AlGaN nucleation layers, APPL PHYS L, 75(3), 1999, pp. 388-390
Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates
Authors: Smart, JA Chumbes, EM Schremer, AT Shealy, JR
Citation: Ja. Smart et al., Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates, APPL PHYS L, 75(24), 1999, pp. 3820-3822
Risultati: 1-18 |