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Results: 1-19 |
Results: 19
Vertical high quality mirrorlike facet of GaN-based device by reactive ionetching
Authors: Chen, CHS Chang, SJ Su, YKI Chi, GC Sheu, JK Lin, IC
Citation: Chs. Chen et al., Vertical high quality mirrorlike facet of GaN-based device by reactive ionetching, JPN J A P 1, 40(4B), 2001, pp. 2762-2764
GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals
Authors: Su, YK Chiou, YZ Juang, FS Chang, SJ Sheu, JK
Citation: Yk. Su et al., GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals, JPN J A P 1, 40(4B), 2001, pp. 2996-2999
GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts
Authors: Chen, CH Chang, SJ Su, YK Chi, GC Chi, JY Chang, CA Sheu, JK Chen, JF
Citation: Ch. Chen et al., GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts, IEEE PHOTON, 13(8), 2001, pp. 848-850
InGaN-AlInGaN multiquantum-well LEDs
Authors: Lai, WC Chang, SJ Yokoyam, M Sheu, JK Chen, JF
Citation: Wc. Lai et al., InGaN-AlInGaN multiquantum-well LEDs, IEEE PHOTON, 13(6), 2001, pp. 559-561
Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer
Authors: Sheu, JK Chi, GC Jou, MJ
Citation: Jk. Sheu et al., Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer, IEEE PHOTON, 13(11), 2001, pp. 1164-1166
Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice
Authors: Sheu, JK Chi, GC Jou, MJ
Citation: Jk. Sheu et al., Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice, IEEE ELEC D, 22(4), 2001, pp. 160-162
Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer
Authors: Sheu, JK Tsai, JM Shei, SC Lai, WC Wen, TC Kou, CH Su, YK Chang, SJ Chi, GC
Citation: Jk. Sheu et al., Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer, IEEE ELEC D, 22(10), 2001, pp. 460-462
Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices
Authors: Sheu, JK Kuo, CH Chen, CC Chi, GC Jou, MJ
Citation: Jk. Sheu et al., Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices, SOL ST ELEC, 45(9), 2001, pp. 1665-1671
Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices
Authors: Kuo, CH Sheu, JK Chi, GC Huang, YL Yeh, TW
Citation: Ch. Kuo et al., Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices, SOL ST ELEC, 45(5), 2001, pp. 717-720
Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition
Authors: Wen, TC Lee, WI Sheu, JK Chi, GC
Citation: Tc. Wen et al., Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition, SOL ST ELEC, 45(3), 2001, pp. 427-430
Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures
Authors: Chen, CC Hsieh, KL Sheu, JK Chi, GC Jou, MJ Lee, CH Lin, MZ
Citation: Cc. Chen et al., Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures, APPL PHYS L, 79(10), 2001, pp. 1477-1479
Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces
Authors: Sheu, JK Su, YK Chi, GC Jou, MJ Liu, CC Chang, CM Hung, WC Bow, JS Yu, YC
Citation: Jk. Sheu et al., Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces, J VAC SCI B, 18(2), 2000, pp. 729-732
Optical properties in InGaN/GaN multiple quantum wells and blue LEDs
Authors: Su, YK Chi, GC Sheu, JK
Citation: Yk. Su et al., Optical properties in InGaN/GaN multiple quantum wells and blue LEDs, OPT MATER, 14(3), 2000, pp. 205-209
The doping process of p-type GaN films
Authors: Chi, GC Kuo, CH Sheu, JK Pan, CJ
Citation: Gc. Chi et al., The doping process of p-type GaN films, MAT SCI E B, 75(2-3), 2000, pp. 210-213
Luminescence of an InGaN/GaN multiple quantum well light-emitting diode
Authors: Sheu, JK Chi, GC Su, YK Liu, CC Chang, CM Hung, WC Jou, MJ
Citation: Jk. Sheu et al., Luminescence of an InGaN/GaN multiple quantum well light-emitting diode, SOL ST ELEC, 44(6), 2000, pp. 1055-1058
High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure
Authors: Tu, LW Kuo, WC Lee, KH Tsao, PH Lai, CM Chu, AK Sheu, JK
Citation: Lw. Tu et al., High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure, APPL PHYS L, 77(23), 2000, pp. 3788-3790
Indium tin oxide ohmic contact to highly doped n-GaN
Authors: Sheu, JK Su, YK Chi, GC Jou, MJ Liu, CC Chang, CM
Citation: Jk. Sheu et al., Indium tin oxide ohmic contact to highly doped n-GaN, SOL ST ELEC, 43(11), 1999, pp. 2081-2084
Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases
Authors: Sheu, JK Su, YK Chi, GC Jou, MJ Liu, CC Chang, CM Hung, WC
Citation: Jk. Sheu et al., Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases, J APPL PHYS, 85(3), 1999, pp. 1970-1974
High-transparency Ni/Au ohmic contact to p-type GaN
Authors: Sheu, JK Su, YK Chi, GC Koh, PL Jou, MJ Chang, CM Liu, CC Hung, WC
Citation: Jk. Sheu et al., High-transparency Ni/Au ohmic contact to p-type GaN, APPL PHYS L, 74(16), 1999, pp. 2340-2342
Risultati: 1-19 |