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Results:
1-16
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Results: 16
Authors:
Ni, ZH
He, CK
Xie, ZN
Shi, BQ
Chen, DJ
Citation: Zh. Ni et al., Experimental test on bridge jointed twin-towered buildings to stochastic wind loads, WIND STRUCT, 4(1), 2001, pp. 63-72
Authors:
Mourokh, LG
Malikova, L
Pollak, FH
Shi, BQ
Nguyen, C
Citation: Lg. Mourokh et al., Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice, J APPL PHYS, 89(4), 2001, pp. 2500-2502
Authors:
Sokolich, M
Fields, CH
Thomas, S
Shi, BQ
Boegeman, YK
Montes, M
Martinez, R
Kramer, AR
Madhav, M
Citation: M. Sokolich et al., A low-power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology, IEEE J SOLI, 36(9), 2001, pp. 1328-1334
Authors:
Broekaert, TPE
Ng, WW
Jensen, JF
Yap, D
Persechini, DL
Bourgholtzer, S
Fields, CH
Brown-Boegeman, YK
Shi, BQ
Walden, RH
Citation: Tpe. Broekaert et al., InP-HBT optoelectronic integrated circuits for photonic analog-to-digital conversion, IEEE J SOLI, 36(9), 2001, pp. 1335-1342
Authors:
Shi, BQ
Tu, CW
Citation: Bq. Shi et Cw. Tu, Evaluation of temperature rise on semiconductor surfaces associated with scanning Ar+ lasers, J CRYST GR, 217(1-2), 2000, pp. 82-90
Authors:
Shi, BQ
Tu, CW
Citation: Bq. Shi et Cw. Tu, Investigations on the mechanisms responsible for Ar+-laser-induced growth enhancement of GaAs by chemical beam epitaxy, J CRYST GR, 217(1-2), 2000, pp. 91-101
Authors:
Shi, BQ
Kondow, M
Tu, CW
Citation: Bq. Shi et al., Chemical beam epitaxy of AlAs using novel group-V precursors, J CRYST GR, 216(1-4), 2000, pp. 80-86
Authors:
Shi, BQ
Tu, CW
Citation: Bq. Shi et Cw. Tu, A reaction model for chemical beam epitaxy with triethylgallium and tris(dimethylamino)arsenic, J CRYST GR, 216(1-4), 2000, pp. 87-96
Authors:
Shi, BQ
Tu, CW
Citation: Bq. Shi et Cw. Tu, Experimental and numerical studies of Ar+-laser-assisted Si doping of GaAswith SiBr4 by chemical beam epitaxy, J CRYST GR, 210(4), 2000, pp. 444-450
Authors:
Kondow, M
Shi, BQ
Tu, CW
Citation: M. Kondow et al., In situ etching using a novel precursor of tertiarybutylchloride (TBCl), J CRYST GR, 209(2-3), 2000, pp. 263-266
Authors:
Zhu, YN
Shi, BQ
Fang, CB
Citation: Yn. Zhu et al., The isotopic compositions of molecular nitrogen: implications on their origins in natural gas accumulations, CHEM GEOL, 164(3-4), 2000, pp. 321-330
Authors:
Shi, BQ
Tu, CW
Citation: Bq. Shi et Cw. Tu, A study of Ar+ laser-assisted Si doping of GaAs by chemical beam epitaxy, APPL PHYS L, 76(13), 2000, pp. 1716-1718
Authors:
Kondow, M
Shi, BQ
Tu, CW
Citation: M. Kondow et al., Chemical beam etching of GaAs using a novel precursor of tertiarybutylchloride (TBCl), JPN J A P 2, 38(6AB), 1999, pp. L617-L619
Authors:
Shi, BQ
Tu, CW
Citation: Bq. Shi et Cw. Tu, A kinetic model for tris(dimethylamino) arsine decomposition on GaAs(100) surfaces, J ELEC MAT, 28(1), 1999, pp. 43-49
Authors:
Shi, BQ
Tu, CW
Citation: Bq. Shi et Cw. Tu, Chemical beam epitaxy of InP with Ar+ laser irradiation, J ELCHEM SO, 146(7), 1999, pp. 2679-2682
Authors:
Shi, BQ
Tu, CW
Citation: Bq. Shi et Cw. Tu, Modeling study of silicon incorporation from SiBr4 in GaAs layers grown bychemical beam epitaxy, J CRYST GR, 195(1-4), 1998, pp. 740-745
Risultati:
1-16
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