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Results: 1-9 |
Results: 9
Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strainedquantum-well pump lasers
Authors: Shiao, HP Lee, HY Lin, YJ Tu, YK Lee, CT
Citation: Hp. Shiao et al., Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strainedquantum-well pump lasers, JPN J A P 1, 40(11), 2001, pp. 6384-6390
High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers
Authors: Lee, CT Tsai, CD Shiao, HP
Citation: Ct. Lee et al., High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers, OPT MATER, 14(3), 2000, pp. 251-253
Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition
Authors: Lee, CY Wu, MC Shiao, HP Ho, WJ
Citation: Cy. Lee et al., Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition, J CRYST GR, 208(1-4), 2000, pp. 137-144
Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition
Authors: Lee, CY Shiao, HP Wu, MC Chen, CW
Citation: Cy. Lee et al., Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition, J VAC SCI B, 17(6), 1999, pp. 2530-2535
MOCVD growth of strained multiple quantum well structure for 1.3 mu m InAsP/InP laser diodes
Authors: Lee, CY Wu, MC Shiao, HP Shi, TT Ho, WJ
Citation: Cy. Lee et al., MOCVD growth of strained multiple quantum well structure for 1.3 mu m InAsP/InP laser diodes, SOL ST ELEC, 43(12), 1999, pp. 2141-2146
Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb InGaAs multiple-quantum-well structures
Authors: Chang, JR Su, YK Jaw, DH Shiao, HP Lin, W
Citation: Jr. Chang et al., Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb InGaAs multiple-quantum-well structures, J CRYST GR, 203(4), 1999, pp. 481-485
High-temperature, low threshold current, and uniform operation 1 x 12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in1.5 mu m
Authors: Lin, CC Wu, MC Shiao, HP Liu, KS
Citation: Cc. Lin et al., High-temperature, low threshold current, and uniform operation 1 x 12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in1.5 mu m, IEEE DEVICE, 46(8), 1999, pp. 1614-1618
Determination of the valence-band offset for GaInAsSb/InP heterostructure
Authors: Chang, JR Su, YK Lu, YT Jaw, DH Shiao, HP Lin, W
Citation: Jr. Chang et al., Determination of the valence-band offset for GaInAsSb/InP heterostructure, APPL PHYS L, 74(5), 1999, pp. 717-719
High conduction-band offset of AlInAsSb InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy
Authors: Chang, JR Su, YK Lin, CL Wu, KM Lu, YT Jaw, DH Shiao, HP Lin, W
Citation: Jr. Chang et al., High conduction-band offset of AlInAsSb InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy, APPL PHYS L, 74(23), 1999, pp. 3495-3497
Risultati: 1-9 |