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Results: 1-9 |
Results: 9
Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaNheterostructure field effect transistor
Authors: Lee, JS Kim, JW Jung, DC Kim, CS Lee, WS Lee, JH Shin, JH Shin, MW Oh, JE Lee, JH
Citation: Js. Lee et al., Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaNheterostructure field effect transistor, JPN J A P 2, 40(3A), 2001, pp. L198-L200
Synthesis of carbazole-containing PPV and its application to the electroluminescent devices
Authors: Lee, JS Oh, EJ Park, JY Shin, MW Cho, IH
Citation: Js. Lee et al., Synthesis of carbazole-containing PPV and its application to the electroluminescent devices, MAT SCI E B, 85(2-3), 2001, pp. 186-189
Performance of GaN MESFETs with an undoped highly resistive buffer layer
Authors: Lee, WS Chung, KW Shin, MW
Citation: Ws. Lee et al., Performance of GaN MESFETs with an undoped highly resistive buffer layer, J KOR PHYS, 38(2), 2001, pp. 146-150
Thermal analysis of Tris (8-hydroxyquinoline) aluminum
Authors: Shin, MW Lee, HC Kim, KS Lee, SH Kim, JC
Citation: Mw. Shin et al., Thermal analysis of Tris (8-hydroxyquinoline) aluminum, THIN SOL FI, 363(1-2), 2000, pp. 244-247
Contact resistance in interface of metal light emitting organic thin films
Authors: Shin, MW Lee, HC Lee, JG Kim, Y Jung, YY Kim, S
Citation: Mw. Shin et al., Contact resistance in interface of metal light emitting organic thin films, THIN SOL FI, 363(1-2), 2000, pp. 302-305
High temperature performance of recessed gate GaN MESFETs fabricated usingphotoelectrochemical etching process
Authors: Lee, WS Choi, YH Chung, KW Moon, DC Shin, MW
Citation: Ws. Lee et al., High temperature performance of recessed gate GaN MESFETs fabricated usingphotoelectrochemical etching process, ELECTR LETT, 36(3), 2000, pp. 265-267
Processing effects of the polyvinyl-butyrol-based binder on the performance of electroluminescent diodes
Authors: Lee, HC Jang, KS Park, JJ Oh, EJ Shin, MW
Citation: Hc. Lee et al., Processing effects of the polyvinyl-butyrol-based binder on the performance of electroluminescent diodes, MOL CRYST A, 337, 1999, pp. 493-496
A new photoelectrochemical etching method for the fabrication of GaN MESFETs
Authors: Lee, WS Choi, YH Chung, KW Moon, DC Shin, MW
Citation: Ws. Lee et al., A new photoelectrochemical etching method for the fabrication of GaN MESFETs, J KOR PHYS, 35, 1999, pp. S283-S286
Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages
Authors: Kum, BH Kang, SC Shin, MW Park, JD
Citation: Bh. Kum et al., Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages, J KOR PHYS, 35, 1999, pp. S395-S398
Risultati: 1-9 |