Authors: Shkerdin, G Stiens, J Vounckx, R

Citation: G. Shkerdin et al., A multi-valley model for hot free-electron nonlinearities at 10.6 mu m in highly doped n-GaAs, EPJ-APPL PH, 12(3), 2000, pp. 169-180

Authors: Vandeputte, J Leroy, O Briers, R Shkerdin, G

Citation: J. Vandeputte et al., Extension of the mode method for viscoelastic media and focused ultrasonicbeams, J ACOUST SO, 108(4), 2000, pp. 1614-1621

Authors: Briers, R Leroy, O Shkerdin, G

Citation: R. Briers et al., Bounded beam interaction with thin inclusions. Characterization by phase differences at Rayleigh angle incidence, J ACOUST SO, 108(4), 2000, pp. 1622-1630

Authors: Shkerdin, G Stiens, J Vounckx, R

Citation: G. Shkerdin et al., Hot free-electron absorption in nonparabolic III-V semiconductors at mid-infrared wavelengths, J APPL PHYS, 85(7), 1999, pp. 3792-3806

Authors: Shkerdin, G Stiens, J Vounckx, R

Citation: G. Shkerdin et al., Comparative study of the intra- and intervalley contributions to the free-carrier induced optical nonlinearity in n-GaAs, J APPL PHYS, 85(7), 1999, pp. 3807-3818