Authors:
Joshkin, VA
Parker, CA
Bedair, SM
Muth, JF
Shmagin, IK
Kolbas, RM
Piner, EL
Molnar, RJ
Citation: Va. Joshkin et al., Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy, J APPL PHYS, 86(1), 1999, pp. 281-288