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Results: 1-8 |
Results: 8
Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy
Authors: Shu, CK Chen, HH Lee, WH Pan, YC Huang, HY Ou, JN Chen, WK Chen, WH Lee, MC
Citation: Ck. Shu et al., Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy, JPN J A P 2, 40(4A), 2001, pp. L306-L308
Optical and electrical investigations of isoelectronic In-doped GaN films
Authors: Shu, CK Lee, WH Pan, YC Chen, CC Lin, HC Ou, J Chen, WH Chen, WK Lee, MC
Citation: Ck. Shu et al., Optical and electrical investigations of isoelectronic In-doped GaN films, SOL ST COMM, 114(5), 2000, pp. 291-293
Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition
Authors: Huang, HY Lin, WC Lee, WH Shu, CK Liao, KC Chen, WK Lee, MC Chen, WH Lee, YY
Citation: Hy. Huang et al., Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition, APPL PHYS L, 77(18), 2000, pp. 2819-2821
Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy
Authors: Huang, HY Shu, CK Lin, WC Chuang, CH Lee, MC Chen, WK Lee, YY
Citation: Hy. Huang et al., Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy, APPL PHYS L, 76(22), 2000, pp. 3224-3226
A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN
Authors: Ou, J Pan, YC Lee, WH Shu, CK Lin, HC Lee, MC Chen, WH Chiang, CI Chang, H Chen, WK
Citation: J. Ou et al., A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN, JPN J A P 1, 38(9A), 1999, pp. 4958-4961
Influence of sapphire nitridation on properties of indium nitride preparedby metalorganic vapor phase epitaxy
Authors: Pan, YC Lee, WH Shu, CK Lin, HC Chiang, CI Chang, H Lin, DS Lee, MC Chen, WK
Citation: Yc. Pan et al., Influence of sapphire nitridation on properties of indium nitride preparedby metalorganic vapor phase epitaxy, JPN J A P 1, 38(2A), 1999, pp. 645-648
Pyrazine formation from serine and threonine
Authors: Shu, CK
Citation: Ck. Shu, Pyrazine formation from serine and threonine, J AGR FOOD, 47(10), 1999, pp. 4332-4335
Isoelectronic In-doping effect in GaN films grown by metalorganic chemicalvapor deposition
Authors: Shu, CK Ou, J Lin, HC Chen, WK Lee, MC
Citation: Ck. Shu et al., Isoelectronic In-doping effect in GaN films grown by metalorganic chemicalvapor deposition, APPL PHYS L, 73(5), 1999, pp. 641-643
Risultati: 1-8 |