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Results: 1-9 |
Results: 9
Modelling of absorption and emission spectra of InxGa1-xN
Authors: Siozade, L Leymarie, J Disseix, P Vasson, A Mihailovic, M Grandjean, N Leroux, M Massies, J
Citation: L. Siozade et al., Modelling of absorption and emission spectra of InxGa1-xN, MAT SCI E B, 82(1-3), 2001, pp. 71-73
Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy
Authors: Siozade, L Disseix, P Vasson, A Leymarie, J Damilano, B Grandjean, N Massies, J
Citation: L. Siozade et al., Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy, PHYS ST S-A, 183(1), 2001, pp. 139-143
Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy
Authors: Aujol, E Trassoudaine, A Siozade, L Pimpinelli, A Cadoret, R
Citation: E. Aujol et al., Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy, J CRYST GR, 230(3-4), 2001, pp. 372-376
Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry
Authors: Siozade, L Colard, S Mihailovic, M Leymarie, J Vasson, A Grandjean, N Leroux, M Massies, J
Citation: L. Siozade et al., Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry, JPN J A P 1, 39(1), 2000, pp. 20-25
Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures
Authors: Siozade, L Leymarie, J Disseix, P Vasson, A Mihailovic, M Grandjean, N Leroux, M Massies, J
Citation: L. Siozade et al., Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures, SOL ST COMM, 115(11), 2000, pp. 575-579
Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy
Authors: Damilano, B Grandjean, N Massies, J Dalmasso, S Reverchon, JL Calligaro, M Duboz, JY Siozade, L Leymarie, J
Citation: B. Damilano et al., Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 363-368
InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blueto red at 300 K
Authors: Damilano, B Grandjean, N Massies, J Siozade, L Leymarie, J
Citation: B. Damilano et al., InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blueto red at 300 K, APPL PHYS L, 77(9), 2000, pp. 1268-1270
Temperature dependence of hexagonal-GaN optical properties below the bandgap
Authors: Siozade, L Colard, S Mihailovic, M Leymarie, J Vasson, A Grandjean, N Leroux, M Massies, J
Citation: L. Siozade et al., Temperature dependence of hexagonal-GaN optical properties below the bandgap, PHYS ST S-B, 216(1), 1999, pp. 73-77
GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy
Authors: Grandjean, N Massies, J Dalmasso, S Vennegues, P Siozade, L Hirsch, L
Citation: N. Grandjean et al., GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy, APPL PHYS L, 74(24), 1999, pp. 3616-3618
Risultati: 1-9 |