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Results: 1-10 |
Results: 10
Semiconductor clathrates: A phonon glass electron crystal material with potential for thermoelectric applications
Authors: Nolas, GS Slack, GA Schujman, SB
Citation: Gs. Nolas et al., Semiconductor clathrates: A phonon glass electron crystal material with potential for thermoelectric applications, SEM SEMIMET, 69, 2001, pp. 255-300
Report on the growth of bulk aluminum nitride and subsequent substrate preparation
Authors: Rojo, JC Slack, GA Morgan, K Raghothamachar, B Dudley, M Schowalter, LJ
Citation: Jc. Rojo et al., Report on the growth of bulk aluminum nitride and subsequent substrate preparation, J CRYST GR, 231(3), 2001, pp. 317-321
Thermoelectric clathrates
Authors: Nolas, GS Slack, GA
Citation: Gs. Nolas et Ga. Slack, Thermoelectric clathrates, AM SCIENT, 89(2), 2001, pp. 136-141
Preparation and characterization of single-crystal aluminum nitride substrates
Authors: Schowalter, LJ Rojo, JC Yakolev, N Shusterman, Y Dovidenko, K Wang, RJ Bhat, I Slack, GA
Citation: Lj. Schowalter et al., Preparation and characterization of single-crystal aluminum nitride substrates, MRS I J N S, 5, 2000, pp. NIL_382-NIL_387
High-pressure stability, pressure-volume equation of state, and crystal structure under pressure of the thermoelectric material IrSb3
Authors: Snider, TS Badding, JV Schujman, SB Slack, GA
Citation: Ts. Snider et al., High-pressure stability, pressure-volume equation of state, and crystal structure under pressure of the thermoelectric material IrSb3, CHEM MATER, 12(3), 2000, pp. 697-700
Epitaxial growth of AlN and Al0.5Ca0.5N layers on aluminum nitride substrates
Authors: Schowalter, LJ Rojo, JC Slack, GA Shusterman, Y Wang, R Bhat, I Arunmozhi, G
Citation: Lj. Schowalter et al., Epitaxial growth of AlN and Al0.5Ca0.5N layers on aluminum nitride substrates, J CRYST GR, 211(1-4), 2000, pp. 78-81
Structural analysis of Sr8Ga16Ge30 clathrate compound
Authors: Schujman, SB Nolas, GS Young, RA Lind, C Wilkinson, AP Slack, GA Patschke, R Kanatzidis, MG Ulutagay, M Hwu, SJ
Citation: Sb. Schujman et al., Structural analysis of Sr8Ga16Ge30 clathrate compound, J APPL PHYS, 87(3), 2000, pp. 1529-1533
Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates
Authors: Schowalter, LJ Shusterman, Y Wang, R Bhat, I Arunmozhi, G Slack, GA
Citation: Lj. Schowalter et al., Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates, APPL PHYS L, 76(8), 2000, pp. 985-987
Optically detected electron paramagnetic resonance of AlN single crystals
Authors: Mason, PM Przybylinska, H Watkins, GD Choyke, WJ Slack, GA
Citation: Pm. Mason et al., Optically detected electron paramagnetic resonance of AlN single crystals, PHYS REV B, 59(3), 1999, pp. 1937-1947
Glasslike heat conduction in high-mobility crystalline semiconductors
Authors: Cohn, JL Nolas, GS Fessatidis, V Metcalf, TH Slack, GA
Citation: Jl. Cohn et al., Glasslike heat conduction in high-mobility crystalline semiconductors, PHYS REV L, 82(4), 1999, pp. 779-782
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