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Results: 1-8 |
Results: 8
Generation of subnanosecond high-voltage pulses with a peak power of up to300 MW and a repetition rate of 2 kHz
Authors: Yalandin, MI Lyubutin, SK Rukin, SN Slovikovskii, BG Ul'maskulov, MR Shpak, VG Shunailov, SA
Citation: Mi. Yalandin et al., Generation of subnanosecond high-voltage pulses with a peak power of up to300 MW and a repetition rate of 2 kHz, TECH PHYS L, 27(1), 2001, pp. 37-40
Subnanosecond switching of gigawatt peak power using a silicon avalanche sharpener
Authors: Lyubutin, SK Mesyats, GA Rukin, SN Slovikovskii, BG Alichkin, EA
Citation: Sk. Lyubutin et al., Subnanosecond switching of gigawatt peak power using a silicon avalanche sharpener, DOKL PHYS, 46(8), 2001, pp. 559-561
Generation of high-voltage subnanosecond pulses with a peak power of 700 MW and repetition frequency of up to 3.5 kHz
Authors: Lyubutin, SK Mesyats, GA Rukin, SN Slovikovskii, BG Ul'maskulov, MR Shpak, VG Shunailov, SA Yalandin, MI
Citation: Sk. Lyubutin et al., Generation of high-voltage subnanosecond pulses with a peak power of 700 MW and repetition frequency of up to 3.5 kHz, INSTR EXP R, 44(5), 2001, pp. 644-652
A high-current nanosecond electron accelerator with a semiconductor opening switch
Authors: Zagulov, FY Kladukhin, VV Kuznetsov, DL Lyubutin, SK Novoselov, YN Rukin, SN Slovikovskii, BG Kharlov, EA
Citation: Fy. Zagulov et al., A high-current nanosecond electron accelerator with a semiconductor opening switch, INSTR EXP R, 43(5), 2000, pp. 647-651
High-frequency pulse generators based on SOS diodes with subnanosecond current cutoff time
Authors: Lyubutin, SK Rukin, SN Slovikovskii, BG Tsyranov, SN
Citation: Sk. Lyubutin et al., High-frequency pulse generators based on SOS diodes with subnanosecond current cutoff time, INSTR EXP R, 43(3), 2000, pp. 331-338
A semiconductor opening switch-based quasi-rectangular pulse generator operating into a low-impedance load
Authors: Lyubutin, SK Rukin, SN Slovikovskii, BG Tsyranov, SN
Citation: Sk. Lyubutin et al., A semiconductor opening switch-based quasi-rectangular pulse generator operating into a low-impedance load, INSTR EXP R, 43(1), 2000, pp. 66-72
A compact semiconductor opening switch-based generator with a 300-kV output voltage and up to 2-kHz pulse repetition rate
Authors: Lyubutin, SK Rukin, SN Slovikovskii, BG
Citation: Sk. Lyubutin et al., A compact semiconductor opening switch-based generator with a 300-kV output voltage and up to 2-kHz pulse repetition rate, INSTR EXP R, 43(1), 2000, pp. 73-77
38-GHz relativistic backward-wave tube based on a modulator with an inductive energy accumulator and a semiconductor current interrupter
Authors: Lyubutin, SK Mesyats, GA Rukin, SN Slovikovskii, BG Shpak, VG Shunailov, SA Ul'maskulov, MR Yalandin, MI
Citation: Sk. Lyubutin et al., 38-GHz relativistic backward-wave tube based on a modulator with an inductive energy accumulator and a semiconductor current interrupter, TECH PHYS L, 25(5), 1999, pp. 377-379
Risultati: 1-8 |