Authors: Djezzar, B Smatti, A Amrouche, A Kechouane, M

Citation: B. Djezzar et al., Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET's devices at low gamma rays radiation doses, IEEE NUCL S, 47(6), 2000, pp. 1872-1878

Authors: Djezzar, B Amrouche, A Smatti, A Kachouane, M

Citation: B. Djezzar et al., Electrical characterization of oxide and Si/SiO2 interface of irradiated NMOS transistors at low radiation doses, IEEE NUCL S, 46(4), 1999, pp. 829-833