Authors: Meskinis, S Slapikas, K Grigaliunas, V Matukas, J Smetona, S

Citation: S. Meskinis et al., The influence of annealing on current-voltage characteristics of H2SeO3 treated Al-nGaAs Schottky contact, PHYS ST S-A, 180(2), 2000, pp. 499-505

Authors: Elenkrig, BB Smetona, S Simmons, JG Takasaki, B Evans, JD Makino, T

Citation: Bb. Elenkrig et al., Series resistance and its effect on the maximum output power of 1.5 mu m strained-layer multiple-quantum-well ridge waveguide InGaAsP lasers, J APPL PHYS, 87(1), 2000, pp. 1-4

Authors: Meskinis, S Smetona, S Balcaitis, G Matukas, J

Citation: S. Meskinis et al., Effects of selenious acid treatment on GaAs Schottky contacts, SEMIC SCI T, 14(2), 1999, pp. 168-172

Authors: Asryan, LV Gun'ko, NA Polkovnikov, AS Suris, RA Zegrya, GG Elenkrig, BB Smetona, S Simmons, JG Lau, PK Makino, T

Citation: Lv. Asryan et al., High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers, SEMIC SCI T, 14(12), 1999, pp. 1069-1075

Authors: Elenkrig, BB Smetona, S Simmons, JG Makino, T Evans, JD

Citation: Bb. Elenkrig et al., Maximum operating power of 1.3 mu m strained layer multiple quantum well InGaAsP lasers, J APPL PHYS, 85(4), 1999, pp. 2367-2370