Authors:
Kim, H
Glass, G
Soares, JANT
Foo, YL
Desjardins, P
Greene, JE
Citation: H. Kim et al., Temperature-modulated Si(001): As gas-source molecular beam epitaxy: Growth kinetics and As incorporation, APPL PHYS L, 79(20), 2001, pp. 3263-3265
Authors:
Kim, H
Glass, G
Soares, JANT
Desjardins, P
Greene, JE
Citation: H. Kim et al., Arsenic incorporation during Si(001): As gas-source molecular-beam epitaxyfrom Si2H6 and AsH3: Effects on film-growth kinetics, J APPL PHYS, 88(12), 2000, pp. 7067-7078
Authors:
Soares, JANT
Kim, H
Glass, G
Desjardins, P
Greene, JE
Citation: Jant. Soares et al., Arsenic-doped Si (001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties, APPL PHYS L, 74(9), 1999, pp. 1290-1292
Authors:
Soares, JANT
Enderlein, R
Beliaev, D
Leite, JR
Saito, M
Citation: Jant. Soares et al., Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy, SEMIC SCI T, 13(12), 1998, pp. 1418-1425