Authors: Vinokurov, DA Kapitonov, VA Nikolaev, DN Sokolova, ZN Tarasov, IS

Citation: Da. Vinokurov et al., Optical study of InP quantum dots, SEMICONDUCT, 35(2), 2001, pp. 235-237

Authors: Vinokurov, DA Kapitonov, VA Nikolaev, DN Stankevich, AL Lyutetskii, AV Pikhtin, NA Slipchenko, SO Sokolova, ZN Fetisova, NV Arsent'ev, IN Tarasov, IS

Citation: Da. Vinokurov et al., MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes, SEMICONDUCT, 35(11), 2001, pp. 1324-1328

Authors: Leshko, AY Lyutetskii, AV Pikhtin, NA Skrynnikov, GV Sokolova, ZN Tarasov, IS Fetisova, NV

Citation: Ay. Leshko et al., On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers, SEMICONDUCT, 34(12), 2000, pp. 1397-1401

Authors: Sokolova, ZN Vinokurov, DA Tarasov, IS Gun'ko, NA Zegrya, GG

Citation: Zn. Sokolova et al., InGaAs/InP heterostructures with strained quantum wells and quantum dots (lambda=1.5-1.9 mu m), SEMICONDUCT, 33(9), 1999, pp. 1007-1009

Authors: Vinokurov, DA Kapitonov, VA Kovalenkov, OV Livshits, DA Sokolova, ZN Tarasov, IS Alferov, ZI

Citation: Da. Vinokurov et al., Self-organized nanoscale InP islands in an InGaP GaAs host and InAs islands in an InGaAs InP host, SEMICONDUCT, 33(7), 1999, pp. 788-791