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Citation: S. Soloviev et al., Boron diffusion into 6H-SiC through graphite mask, J ELEC MAT, 30(3), 2001, pp. 224-227

Authors: Gao, Y Soloviev, S Sudarshan, TS

Citation: Y. Gao et al., Planar 4H-and 6H-SiC p-n diodes fabricated by selective diffusion of boron, SOL ST ELEC, 45(12), 2001, pp. 1987-1990

Authors: Vaina, LM Soloviev, S Bienfang, DC Cowey, A

Citation: Lm. Vaina et al., A lesion of cortical area V2 selectively impairs the perception of the direction of first-order visual motion, NEUROREPORT, 11(5), 2000, pp. 1039-1044

Authors: Sudarshan, TS Soloviev, S Khlebnikov, I Madangarli, V

Citation: Ts. Sudarshan et al., Structural defect visualization and oxide breakdown in SiC wafers after thermal oxidation, MAT SCI E B, 61-2, 1999, pp. 464-467

Authors: Ullman, S Soloviev, S

Citation: S. Ullman et S. Soloviev, Computation of pattern invariance in brain-like structures, NEURAL NETW, 12(7-8), 1999, pp. 1021-1036