Authors:
Glass, G
Kim, H
Desjardins, P
Taylor, N
Spila, T
Lu, Q
Greene, JE
Citation: G. Glass et al., Ultrahigh B doping (<= 10(22) cm(-)3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport, PHYS REV B, 61(11), 2000, pp. 7628-7644
Authors:
Desjardins, P
Spila, T
Gurdal, O
Taylor, N
Greene, JE
Citation: P. Desjardins et al., Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge1-xSnx alloys on Ge(001)2x1, PHYS REV B, 60(23), 1999, pp. 15993-15998
Authors:
Taylor, N
Kim, H
Spila, T
Eades, JA
Glass, G
Desjardins, P
Greene, JE
Citation: N. Taylor et al., Growth of Si1-xGex(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions, J APPL PHYS, 85(1), 1999, pp. 501-511