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Results: 1-12 |
Results: 12

Authors: Paschotta, R der Au, JA Spuhler, GJ Erhard, S Giesen, B Keller, U
Citation: R. Paschotta et al., Passive mode locking of thin-disk lasers: effects of spatial hole burning, APP PHYS B, 72(3), 2001, pp. 267-278

Authors: Spuhler, GJ Paschotta, R Kullberg, MP Graf, M Moser, M Mix, E Huber, G Harder, C Keller, U
Citation: Gj. Spuhler et al., A passively Q-switched Yb : YAG microchip laser, APP PHYS B, 72(3), 2001, pp. 285-287

Authors: Spuhler, GJ Paschotta, R Fluck, R Braun, B Moser, M Zhang, G Gini, E Keller, U
Citation: Gj. Spuhler et al., Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers (vol 16, pg 376, 1999), J OPT SOC B, 18(6), 2001, pp. 886-886

Authors: Brunner, F Paschotta, R Aus der Au, J Spuhler, GJ Morier-Genoud, F Hovel, R Moser, M Erhard, S Karszewski, M Giesen, A Keller, U
Citation: F. Brunner et al., Widely tunable pulse durations from a passively mode-locked thin-disk Yb :YAG laser, OPTICS LETT, 26(6), 2001, pp. 379-381

Authors: Spuhler, GJ Reffert, S Haiml, M Moser, M Keller, U
Citation: Gj. Spuhler et al., Output-coupling semiconductor saturable absorber mirror, APPL PHYS L, 78(18), 2001, pp. 2733-2735

Authors: Spuhler, GJ Sudmeyer, T Paschotta, R Moser, M Weingarten, KJ Keller, U
Citation: Gj. Spuhler et al., Passively mode-locked high-power Nd : YAG lasers with multiple laser heads, APP PHYS B, 71(1), 2000, pp. 19-25

Authors: Paschotta, R der Au, JA Spuhler, GJ Morier-Genoud, F Hovel, R Moser, M Erhard, S Karszewski, M Giesen, A Keller, U
Citation: R. Paschotta et al., Diode-pumped passively mode-locked lasers with high average power, APP PHYS B, 70, 2000, pp. S25-S31

Authors: Brunner, F Spuhler, GJ der Au, JA Krainer, L Morier-Genoud, F Paschotta, R Lichtenstein, N Weiss, S Harder, C Lagatsky, AA Abdolvand, A Kuleshov, NV Keller, U
Citation: F. Brunner et al., Diode-pumped femtosecond Yb : KGd(WO4)(2) laser with 1.1-W average power, OPTICS LETT, 25(15), 2000, pp. 1119-1121

Authors: der Au, JA Spuhler, GJ Sudmeyer, T Paschotta, R Hovel, R Moser, M Erhard, S Karszewski, M Giesen, A Keller, U
Citation: Ja. Der Au et al., 16.2-W average power from a diode-pumped femtosecond Yb : YAG thin disk laser, OPTICS LETT, 25(11), 2000, pp. 859-861

Authors: Spuhler, GJ Paschotta, R Fluck, R Braun, B Moser, M Zhang, G Gini, E Keller, U
Citation: Gj. Spuhler et al., Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers, J OPT SOC B, 16(3), 1999, pp. 376-388

Authors: Spuhler, GJ Paschotta, R Keller, U Moser, M Dymott, MJP Kopf, D Meyer, J Weingarten, KJ Kmetec, JD Alexander, J Truong, G
Citation: Gj. Spuhler et al., Diode-pumped passively mode-locked Nd : YAG laser with 10-W average power in a diffraction-limited beam, OPTICS LETT, 24(8), 1999, pp. 528-530

Authors: Paschotta, R Spuhler, GJ Sutter, DH Matuschek, N Keller, U Moser, M Hovel, R Scheuer, V Angelow, G Tschudi, T
Citation: R. Paschotta et al., Double-chirped semiconductor mirror for dispersion compensation in femtosecond lasers, APPL PHYS L, 75(15), 1999, pp. 2166-2168
Risultati: 1-12 |