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Results: 1-11 |
Results: 11
Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations - art. no. 125119
Authors: Gall, D Stadele, M Jarrendahl, K Petrov, I Desjardins, P Haasch, RT Lee, TY Greene, JE
Citation: D. Gall et al., Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations - art. no. 125119, PHYS REV B, 6312(12), 2001, pp. 5119
Tunneling through ultrathin SiO2 gate oxides from microscopic models
Authors: Stadele, M Tuttle, BR Hess, K
Citation: M. Stadele et al., Tunneling through ultrathin SiO2 gate oxides from microscopic models, J APPL PHYS, 89(1), 2001, pp. 348-363
Norm-conserving pseudopotentials in the exact-exchange Kohn-Sham formalism
Authors: Moukara, M Stadele, M Majewski, JA Vogl, P Gorling, A
Citation: M. Moukara et al., Norm-conserving pseudopotentials in the exact-exchange Kohn-Sham formalism, J PHYS-COND, 12(30), 2000, pp. 6783-6798
Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides: predictions from microscopic models
Authors: Stadele, M Fischer, B Tuttle, BR Hess, K
Citation: M. Stadele et al., Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides: predictions from microscopic models, SUPERLATT M, 28(5-6), 2000, pp. 517-524
Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides
Authors: Stadele, M Tuttle, BR Hess, K Register, LF
Citation: M. Stadele et al., Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides, SUPERLATT M, 27(5-6), 2000, pp. 405-409
Exact-exchange-based quasiparticle calculations
Authors: Aulbur, WG Stadele, M Gorling, A
Citation: Wg. Aulbur et al., Exact-exchange-based quasiparticle calculations, PHYS REV B, 62(11), 2000, pp. 7121-7132
Metallization of molecular hydrogen: Predictions from exact-exchange calculations
Authors: Stadele, M Martin, RM
Citation: M. Stadele et Rm. Martin, Metallization of molecular hydrogen: Predictions from exact-exchange calculations, PHYS REV L, 84(26), 2000, pp. 6070-6073
Effective-mass enhancement and nonparabolicity in thin GaAs quantum wells
Authors: Stadele, M Hess, K
Citation: M. Stadele et K. Hess, Effective-mass enhancement and nonparabolicity in thin GaAs quantum wells, J APPL PHYS, 88(11), 2000, pp. 6945-6947
Density-functional study of small molecules within the Krieger-Li-Iafrate approximation
Authors: Kim, YH Stadele, M Martin, RM
Citation: Yh. Kim et al., Density-functional study of small molecules within the Krieger-Li-Iafrate approximation, PHYS REV A, 60(5), 1999, pp. 3633-3640
First principles modeling of high field transport in wide-band-gap materials
Authors: Dur, M Goodnick, SM Redmer, R Reigrotzki, M Fitzer, N Stadele, M
Citation: M. Dur et al., First principles modeling of high field transport in wide-band-gap materials, PHYSICA B, 272(1-4), 1999, pp. 295-298
Exact exchange Kohn-Sham formalism applied to semiconductors
Authors: Stadele, M Moukara, M Majewski, JA Vogl, P Gorling, A
Citation: M. Stadele et al., Exact exchange Kohn-Sham formalism applied to semiconductors, PHYS REV B, 59(15), 1999, pp. 10031-10043
Risultati: 1-11 |