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Citation: J. Sebastian et al., High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence, IEEE S T QU, 7(2), 2001, pp. 334-339

Authors: Wenzel, H Bugge, F Erbert, G Hulsewede, R Staske, R Trankle, G

Citation: H. Wenzel et al., High-power diode lasers with small vertical beam divergence emitting at 808 nm, ELECTR LETT, 37(16), 2001, pp. 1024-1026

Authors: Bugge, F Erbert, G Fricke, J Gramlich, S Staske, R Wenzel, H Zeimer, U Weyers, M

Citation: F. Bugge et al., 12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells, APPL PHYS L, 79(13), 2001, pp. 1965-1967

Authors: Beister, G Erbert, G Knauer, A Maege, J Ressel, P Sebastian, J Staske, R Wenzel, H

Citation: G. Beister et al., High-power and high temperature long-term stability of Al-free 950nm laserstructures on GaAs, ELECTR LETT, 35(19), 1999, pp. 1641-1643