Authors: Steinle, G Riechert, H Egorov, AY

Citation: G. Steinle et al., Monolithic VCSEL with InGaAsN active region emitting at 1.28 mu m and CW output power exceeding 500 mu W at room temperature, ELECTR LETT, 37(2), 2001, pp. 93-95

Authors: Steinle, G Mederer, F Kicherer, M Michalzik, R Kristen, G Egorov, AY Riechert, H Wolf, HD Ebeling, KJ

Citation: G. Steinle et al., Data transmission up to 10Gbit/s with 1.3 mu m wavelength InGaAsN VCSELs' (vol 37, pg 632, 2001), ELECTR LETT, 37(12), 2001, pp. 803-803

Authors: Steinle, G Mederer, F Kicherer, M Michalzik, R Kristen, G Egorov, AY Riechert, H Wolf, HD Ebeling, KJ

Citation: G. Steinle et al., Data transmission up to 10Gbit/s with 1.3 mu m wavelength InGaAsNVCSELs, ELECTR LETT, 37(10), 2001, pp. 632-634

Authors: Steinle, G Wolf, HD Popp, M Ebeling, KJ

Citation: G. Steinle et al., Vertical-cavity surface-emitting laser monolithically integrated with intracavity-monitor diode with temperature-insensitive responsivity, ELECTR LETT, 37(1), 2001, pp. 34-36

Authors: Steinle, G Neundorf, D Hiller, W Pietralla, M

Citation: G. Steinle et al., Two-dimensional simulation of filaments in barrier discharges, J PHYS D, 32(12), 1999, pp. 1350-1356