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Results:
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Results: 3
Excitation efficiency of electrons and holes in forward and reverse biasedepitaxially grown Er-doped Si diodes
Authors:
Markmann, M Neufeld, E Sticht, A Brunner, K Abstreiter, G
Citation:
M. Markmann et al., Excitation efficiency of electrons and holes in forward and reverse biasedepitaxially grown Er-doped Si diodes, APPL PHYS L, 78(2), 2001, pp. 210-212
Enhancement of erbium photoluminescence by substitutional C alloying of Si
Authors:
Markmann, M Neufeld, E Sticht, A Brunner, K Abstreiter, G Buchal, C
Citation:
M. Markmann et al., Enhancement of erbium photoluminescence by substitutional C alloying of Si, APPL PHYS L, 75(17), 1999, pp. 2584-2586
Characteristics of surface and waveguide emitting SiGe : Er : O diodes
Authors:
Sticht, A Neufeld, E Luigart, A Brunner, K Abstreiter, G Bay, H
Citation:
A. Sticht et al., Characteristics of surface and waveguide emitting SiGe : Er : O diodes, J LUMINESC, 80(1-4), 1998, pp. 321-327
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