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Results:
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Results: 25
Authors:
Bognar, S
Grundmann, M
Stier, O
Ouyang, D
Ribbat, C
Heitz, R
Sellin, R
Bimberg, D
Citation: S. Bognar et al., Large modal gain of InAs/GaAs quantum dot lasers, PHYS ST S-B, 224(3), 2001, pp. 823-826
Authors:
Muller-Kirsch, L
Schliwa, A
Stier, O
Heitz, R
Kirmse, H
Neumann, W
Bimberg, D
Citation: L. Muller-kirsch et al., State filling in type II quantum dots, PHYS ST S-B, 224(2), 2001, pp. 349-352
Authors:
Heitz, R
Guffarth, F
Mukhametzhanov, I
Stier, O
Madhukar, A
Bimberg, D
Citation: R. Heitz et al., Excited states of InAs/GaAs quantum dots, PHYS ST S-B, 224(2), 2001, pp. 367-371
Authors:
Schliwa, A
Stier, O
Heitz, R
Grundmann, M
Bimberg, D
Citation: A. Schliwa et al., Exciton level crossing in coupled InAs/GaAs quantum dot pairs, PHYS ST S-B, 224(2), 2001, pp. 405-408
Authors:
Guffarth, F
Heitz, R
Schliwa, A
Stier, O
Kovsh, AR
Ustinov, V
Ledentsov, NN
Bimberg, D
Citation: F. Guffarth et al., Electronic properties of InAs/GaAs quantum dots covered by an InxGa1-xAs quantum well, PHYS ST S-B, 224(1), 2001, pp. 61-65
Authors:
Stier, O
Schliwa, A
Heitz, R
Grundmann, M
Bimberg, D
Citation: O. Stier et al., Stability of biexcitons in pyramidal InAs/GaAs quantum dots, PHYS ST S-B, 224(1), 2001, pp. 115-118
Authors:
Turck, V
Rodt, S
Heitz, R
Stier, O
Strassburg, M
Pohl, UW
Bimberg, D
Citation: V. Turck et al., Charged excitons and biexcitons in self-organized CdSe quantum dots, PHYS ST S-B, 224(1), 2001, pp. 217-221
Authors:
Guffarth, F
Heitz, R
Schliwa, A
Stier, O
Ledentsov, NN
Kovsh, AR
Ustinov, VM
Bimberg, D
Citation: F. Guffarth et al., Strain engineering of self-organized InAs quantum dots - art. no. 085305, PHYS REV B, 6408(8), 2001, pp. 5305
Authors:
Asryan, LV
Grundmann, M
Ledentsov, NN
Stier, O
Suris, RA
Bimberg, D
Citation: Lv. Asryan et al., Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser, J APPL PHYS, 90(3), 2001, pp. 1666-1668
Authors:
Asryan, LV
Grundmann, M
Ledentsov, NN
Stier, O
Suris, RA
Bimberg, D
Citation: Lv. Asryan et al., Effect of excited-state transitions on the threshold characteristics of a quantum dot laser, IEEE J Q EL, 37(3), 2001, pp. 418-425
Authors:
Muller-Kirsch, L
Heitz, R
Schliwa, A
Stier, O
Bimberg, D
Kirmes, H
Neumann, W
Citation: L. Muller-kirsch et al., Many-particle effects in type II quantum dots (vol 78, pg 1418, 2001), APPL PHYS L, 78(24), 2001, pp. 3908-3908
Authors:
Muller-Kirsch, L
Heitz, R
Schliwa, A
Stier, O
Bimberg, D
Kirmse, H
Neumann, W
Citation: L. Muller-kirsch et al., Many-particle effects in type II quantum dots, APPL PHYS L, 78(10), 2001, pp. 1418-1420
Authors:
Martinet, E
Dupertuis, MA
Reinhardt, F
Biasiol, G
Kapon, E
Stier, O
Grundmann, M
Bimberg, D
Citation: E. Martinet et al., Separation of strain and quantum-confinement effects in the optical spectra of quantum wires, PHYS REV B, 61(7), 2000, pp. 4488-4491
Authors:
Grundmann, M
Stier, O
Schliwa, A
Bimberg, D
Citation: M. Grundmann et al., Electronic structure of cleaved-edge-overgrowth strain-induced quantum wires, PHYS REV B, 61(3), 2000, pp. 1744-1747
Authors:
Turck, V
Rodt, S
Stier, O
Heitz, R
Engelhardt, R
Pohl, UW
Bimberg, D
Steingruber, R
Citation: V. Turck et al., Effect of random field fluctuations on excitonic transitions of individualCdSe quantum dots, PHYS REV B, 61(15), 2000, pp. 9944-9947
Authors:
Heitz, R
Stier, O
Mukhametzhanov, I
Madhukar, A
Bimberg, D
Citation: R. Heitz et al., Quantum size effect in self-organized InAs/GaAs quantum dots, PHYS REV B, 62(16), 2000, pp. 11017-11028
Authors:
Grundmann, M
Stier, O
Bognar, S
Ribbat, C
Heinrichsdorff, F
Bimberg, D
Citation: M. Grundmann et al., Optical properties of self-organized quantum dots: Modeling and experiments, PHYS ST S-A, 178(1), 2000, pp. 255-262
Authors:
Turck, V
Rodt, S
Stier, O
Heitz, R
Pohl, UW
Engelhardt, R
Bimberg, D
Citation: V. Turck et al., Line broadening and localization mechanisms in CdSe/ZnSe quantum dots, J LUMINESC, 87-9, 2000, pp. 337-340
Authors:
Gibis, R
Schelhase, S
Steingruber, R
Urmann, G
Kunzel, H
Thiel, S
Stier, O
Bimberg, D
Citation: R. Gibis et al., MOMBE selective infill growth of InP/GaInAs for quantum dot formation, J CRYST GR, 209(2-3), 2000, pp. 499-503
Authors:
Stier, O
Ortleb, H
Citation: O. Stier et H. Ortleb, Occurrence, use and possible substitution of quartz, GEFAHR R L, 59(1-2), 1999, pp. 27-31
Authors:
Kapteyn, CMA
Heinrichsdorff, F
Stier, O
Heitz, R
Grundmann, M
Zakharov, ND
Bimberg, D
Werner, P
Citation: Cma. Kapteyn et al., Electron escape from InAs quantum dots, PHYS REV B, 60(20), 1999, pp. 14265-14268
Authors:
Stier, O
Grundmann, M
Bimberg, D
Citation: O. Stier et al., Electronic and optical properties of strained quantum dots modeled by 8-band k center dot p theory, PHYS REV B, 59(8), 1999, pp. 5688-5701
Authors:
Sek, G
Misiewicz, J
Ryczko, K
Kubisa, M
Heinrichsdorff, F
Stier, O
Bimberg, D
Citation: G. Sek et al., Room temperature photoreflectance of MOCVD-grown InAs GaAs quantum dots, SOL ST COMM, 110(12), 1999, pp. 657-660
Authors:
Heitz, R
Mukhametzhanov, I
Stier, O
Madhukar, A
Bimberg, D
Citation: R. Heitz et al., Enhanced polar exciton-LO-phonon interaction in quantum dots, PHYS REV L, 83(22), 1999, pp. 4654-4657
Authors:
Heinrichsdorff, F
Grundmann, M
Stier, O
Krost, A
Bimberg, D
Citation: F. Heinrichsdorff et al., Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots, J CRYST GR, 195(1-4), 1998, pp. 540-545
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