Authors: Yuan, P Hansing, CC Anselm, KA Lenox, CV Nie, H Holmes, AL Streetman, BC Campbell, JC

Citation: P. Yuan et al., Impact ionization characteristics of III-V semiconductors for a wide rangeof multiplication region thicknesses, IEEE J Q EL, 36(2), 2000, pp. 198-204

Authors: Yuan, P Anselm, KA Hu, C Nie, H Lenox, C Holmes, AL Streetman, BC Campbell, JC McIntyre, RJ

Citation: P. Yuan et al., A new look at impact ionization - Part II: Gain and noise in short avalanche photodiodes, IEEE DEVICE, 46(8), 1999, pp. 1632-1639