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Results: 26-50/53
Authors:
Wang, CW
Soong, BS
Chen, JY
Chen, CL
Su, YK
Citation: Cw. Wang et al., Effects of gamma-ray irradiation on the microstructural and luminescent properties of radio-frequency magnetron-sputtered GaN thin films, J APPL PHYS, 88(11), 2000, pp. 6355-6358
Authors:
Su, YK
Chen, WR
Chang, SJ
Juang, FS
Lan, WH
Lin, ACH
Chang, H
Citation: Yk. Su et al., The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents, IEEE DEVICE, 47(7), 2000, pp. 1330-1333
Authors:
Su, YK
Chang, JR
Lu, YT
Lin, CL
Wu, KM
Citation: Yk. Su et al., Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode, IEEE DEVICE, 47(4), 2000, pp. 895-897
Authors:
Chang, SJ
Su, YK
Juang, FS
Lin, CT
Chiang, CD
Cherng, YT
Citation: Sj. Chang et al., Photo-enhanced native oxidation process for Hg0.8Cd0.2Te photoconductors, IEEE J Q EL, 36(5), 2000, pp. 583-589
Authors:
Tanahashi, T
Su, YK
Nagakura, N
Nayeshiro, H
Citation: T. Tanahashi et al., Quaternary isoquinoline alkaloids from Stephania cepharantha, CHEM PHARM, 48(3), 2000, pp. 370-373
Authors:
Wang, CW
Liao, JY
Chen, CL
Lin, WK
Su, YK
Yokoyama, M
Citation: Cw. Wang et al., Effect of rapid thermal annealing on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes, J VAC SCI B, 17(4), 1999, pp. 1545-1548
Authors:
Chen, HJ
Lin, DY
Huang, YS
Tu, RC
Su, YK
Tiong, KK
Citation: Hj. Chen et al., Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs, SEMIC SCI T, 14(1), 1999, pp. 85-88
Authors:
Lo, I
Chen, SJ
Tu, LW
Mitchel, WC
Tu, RC
Su, YK
Citation: I. Lo et al., Effect of electron-electron interactions on a two-dimensional electron gasin II-VIZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells, PHYS REV B, 60(16), 1999, pp. R11281-R11284
Authors:
Sheu, JK
Su, YK
Chi, GC
Jou, MJ
Liu, CC
Chang, CM
Citation: Jk. Sheu et al., Indium tin oxide ohmic contact to highly doped n-GaN, SOL ST ELEC, 43(11), 1999, pp. 2081-2084
Authors:
Chang, JR
Su, YK
Lin, CL
Jaw, DH
Lin, W
Citation: Jr. Chang et al., GaInAsSb/InP multiple-quantum-well structure grown by metalorganic vapor-phase epitaxy, J CRYST GR, 206(4), 1999, pp. 263-266
Authors:
Chang, JR
Su, YK
Jaw, DH
Shiao, HP
Lin, W
Citation: Jr. Chang et al., Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb InGaAs multiple-quantum-well structures, J CRYST GR, 203(4), 1999, pp. 481-485
Authors:
Tu, RC
Su, YK
Huang, YS
Chien, FR
Citation: Rc. Tu et al., Structural and optical properties of high-quality ZnTe grown on GaAs usingZnSe ZnTe strained-layer superlattices buffer layer, J CRYST GR, 202, 1999, pp. 506-509
Authors:
Tu, RC
Su, YK
Lan, WH
Chien, FR
Citation: Rc. Tu et al., Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinementheterostructures with different buffer layers grown by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 961-964
Authors:
Chang, JR
Su, YK
Lu, YT
Citation: Jr. Chang et al., GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy, J APPL PHYS, 86(12), 1999, pp. 6908-6910
Authors:
Tu, RC
Su, YK
Chou, ST
Citation: Rc. Tu et al., Effects of thermal annealing on photoluminescence and structural properties of (ZnSe)(2)(CdSe)(n) short-period-superlattices multiple quantum wells, J APPL PHYS, 85(4), 1999, pp. 2398-2401
Authors:
Sheu, JK
Su, YK
Chi, GC
Jou, MJ
Liu, CC
Chang, CM
Hung, WC
Citation: Jk. Sheu et al., Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases, J APPL PHYS, 85(3), 1999, pp. 1970-1974
Authors:
Liaw, UH
Su, YK
Citation: Uh. Liaw et Yk. Su, 1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors, J APPL PHYS, 85(12), 1999, pp. 8485-8489
Authors:
Su, YK
Juang, FS
Chang, SM
Chiang, CD
Cherng, YT
Citation: Yk. Su et al., 1/f noise and specific detectivity of HgCdTe photodiodes passivated with ZnS-CdS films, IEEE J Q EL, 35(5), 1999, pp. 751-756
Authors:
Chang, SJ
Chen, WR
Su, YK
Chen, JF
Lan, WH
Lin, ACH
Chang, H
Citation: Sj. Chang et al., Formation of local p(+) region in ZnSe by Cu3Ge contact, ELECTR LETT, 35(25), 1999, pp. 2231-2232
Authors:
Chang, SJ
Chen, WR
Su, YK
Tu, RC
Lan, WH
Chang, H
Citation: Sj. Chang et al., Ohmic contact to p-ZnSe and p-ZnMgSSe, ELECTR LETT, 35(15), 1999, pp. 1280-1281
Authors:
Juang, FS
Su, YK
Chang, SJ
Chang, SM
Shu, FS
Chiang, CD
Cherng, YT
Sun, TP
Citation: Fs. Juang et al., Dark currents in HgCdTe photodiodes passivated with ZnS/Cds, J ELCHEM SO, 146(4), 1999, pp. 1540-1545
Authors:
Chang, JR
Su, YK
Lin, CL
Wu, KM
Huang, WC
Lu, YT
Jaw, DH
Li, WL
Chen, SM
Citation: Jr. Chang et al., Measurement of AlInAsSb GaInAsSb heterojunction band offset by photoluminescence spectroscopy, APPL PHYS L, 75(2), 1999, pp. 238-240
Authors:
Chang, JR
Su, YK
Lu, YT
Jaw, DH
Shiao, HP
Lin, W
Citation: Jr. Chang et al., Determination of the valence-band offset for GaInAsSb/InP heterostructure, APPL PHYS L, 74(5), 1999, pp. 717-719
Authors:
Chang, JR
Su, YK
Lin, CL
Wu, KM
Lu, YT
Jaw, DH
Shiao, HP
Lin, W
Citation: Jr. Chang et al., High conduction-band offset of AlInAsSb InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy, APPL PHYS L, 74(23), 1999, pp. 3495-3497
Authors:
Sheu, JK
Su, YK
Chi, GC
Koh, PL
Jou, MJ
Chang, CM
Liu, CC
Hung, WC
Citation: Jk. Sheu et al., High-transparency Ni/Au ohmic contact to p-type GaN, APPL PHYS L, 74(16), 1999, pp. 2340-2342