Authors:
Vilisova, MD
Ivonin, IV
Lavrentieva, LG
Subach, SV
Yakubenya, MP
Preobrazhenskii, VV
Putyato, MA
Semyagin, BR
Bert, NA
Musikhin, YG
Chaldyshev, VV
Citation: Md. Vilisova et al., Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy, SEMICONDUCT, 33(8), 1999, pp. 824-829