Authors:
de Souza, JP
Suprun-Belevich, Y
Boudinov, H
Cima, CA
Citation: Jp. De Souza et al., Mechanical strain and damage in Si implanted with O and N ions at elevatedtemperatures: Evidence of ion beam induced annealing, J APPL PHYS, 89(1), 2001, pp. 42-46
Authors:
Cima, CA
Boudinov, H
de Souza, JP
Suprun-Belevich, Y
Fichtner, PFP
Citation: Ca. Cima et al., Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures, J APPL PHYS, 88(4), 2000, pp. 1771-1775
Authors:
de Souza, JP
Suprun-Belevich, Y
Boudinov, H
Cima, CA
Citation: Jp. De Souza et al., Damage accumulation in Si crystal during ion implantation at elevated temperatures: Evidence of chemical effects, J APPL PHYS, 87(12), 2000, pp. 8385-8388
Authors:
Suprun-Belevich, Y
Palmetshofer, L
Sealy, BJ
Emerson, N
Citation: Y. Suprun-belevich et al., Mechanical strain and electrically active defects in Si implanted with Ge+ions, SEMIC SCI T, 14(6), 1999, pp. 565-569
Authors:
Cristiano, F
Nejim, A
Suprun-Belevich, Y
Claverie, A
Hemment, PLF
Citation: F. Cristiano et al., Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys, NUCL INST B, 147(1-4), 1999, pp. 35-42