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Results: 26-50/53
Authors:
Perlin, P
Wisniewski, P
Skierbiszewski, C
Suski, T
Kaminska, E
Subramanya, SG
Weber, ER
Mars, DE
Walukiewicz, W
Citation: P. Perlin et al., Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01, APPL PHYS L, 76(10), 2000, pp. 1279-1281
Authors:
Leszczynski, M
Prystawko, P
Suski, T
Lucznik, B
Domagala, J
Bak-Misiuk, J
Stonert, A
Turos, A
Langer, R
Barski, A
Citation: M. Leszczynski et al., Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire, J ALLOY COM, 286(1-2), 1999, pp. 271-275
Authors:
Domagala, J
Leszczynski, M
Prystawko, P
Suski, T
Langer, R
Barski, A
Bremser, M
Citation: J. Domagala et al., Strain relaxation of AlxGa1-xN epitaxial layers on GaN and SiC substrates, J ALLOY COM, 286(1-2), 1999, pp. 284-288
Authors:
Suski, T
Jun, J
Leszczynski, M
Teisseyre, H
Grzegory, I
Porowski, S
Dollinger, G
Saarinen, K
Laine, T
Nissila, J
Burkhard, W
Kriegseis, W
Meyer, BK
Citation: T. Suski et al., High pressure fabrication and processing of GaN : Mg, MAT SCI E B, 59(1-3), 1999, pp. 1-5
Authors:
Saarinen, K
Nissila, J
Oila, J
Ranki, V
Hakala, M
Puska, MJ
Hautojarvi, P
Likonen, J
Suski, T
Grzegory, I
Lucznik, B
Porowski, S
Citation: K. Saarinen et al., Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals, PHYSICA B, 274, 1999, pp. 33-38
Authors:
Godlewski, M
Suski, T
Grzegory, I
Porowski, S
Bergman, JP
Chen, WM
Monemar, B
Citation: M. Godlewski et al., Mechanism of radiative recombination in acceptor-doped bulk GaN crystals, PHYSICA B, 274, 1999, pp. 39-42
Authors:
Bayerl, MW
Brandt, MS
Suski, T
Grzegory, I
Porowski, S
Stutzmann, M
Citation: Mw. Bayerl et al., ODMR of bound excitons in Mg-doped GaN, PHYSICA B, 274, 1999, pp. 120-123
Authors:
Porowski, S
Jun, J
Krukowski, S
Grzegory, I
Leszczynski, M
Suski, T
Teisseyre, H
Foxon, CT
Korakakis, D
Citation: S. Porowski et al., Annealing of gallium nitride under high-N-2 pressure, PHYSICA B, 265(1-4), 1999, pp. 295-299
Authors:
Danilchenko, B
Bockowski, M
Grzegory, I
Guzenko, V
Paszkiewicz, T
Suski, T
Citation: B. Danilchenko et al., Propagation of phonon pulses in crystalline GaN, PHYSICA B, 263, 1999, pp. 727-729
Authors:
Frayssinet, E
Knap, W
Robert, JL
Prystawko, P
Leszczynski, M
Suski, T
Wisniewski, P
Litwin-Staszewska, E
Porowski, S
Beaumont, B
Gibart, P
Citation: E. Frayssinet et al., Infrared reflectivity and transport investigations of GaN single crystals and homoepitaxial layers, PHYS ST S-B, 216(1), 1999, pp. 91-94
Authors:
Skierbiszewski, C
Perlin, P
Wisniewski, P
Suski, T
Walukiewicz, W
Shan, W
Ager, JW
Haller, EE
Geisz, JF
Friedman, DJ
Olson, JM
Kurtz, SR
Citation: C. Skierbiszewski et al., Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys, PHYS ST S-B, 216(1), 1999, pp. 135-139
Authors:
Suski, T
Perlin, P
Skierbiszewski, C
Wisniewski, P
Dmowski, L
Leszczynski, M
Walukiewicz, W
Citation: T. Suski et al., Pressure studies of defects and impurities in nitrides, PHYS ST S-B, 216(1), 1999, pp. 521-528
Authors:
Litwin-Staszewska, E
Suski, T
Grzegory, I
Porowski, S
Perlin, P
Robert, JL
Contreras, S
Wasik, D
Witowski, A
Cote, D
Clerjaud, B
Citation: E. Litwin-staszewska et al., Electrical properties of GaN bulk single crystals doped with Mg, PHYS ST S-B, 216(1), 1999, pp. 567-570
Authors:
Wichert, J
Weber, R
Kipp, L
Skibowski, M
Strasser, T
Starrost, F
Solterbeck, C
Schattke, W
Suski, T
Grzegory, I
Porowski, S
Citation: J. Wichert et al., Angle resolved photoemission spectroscopy of GaN (10(1)over-bar-0): Experiment and theory, PHYS ST S-B, 215(1), 1999, pp. 751-755
Authors:
Perlin, P
Suski, T
Ager, JW
Conti, G
Polian, A
Christensen, NE
Gorczyca, I
Grzegory, I
Weber, ER
Haller, EE
Citation: P. Perlin et al., Transverse effective charge and its pressure dependence in GaN single crystals, PHYS REV B, 60(3), 1999, pp. 1480-1483
Authors:
Domagala, J
Leszczynski, M
Suski, T
Jun, J
Prystawko, P
Teisseyre, H
Citation: J. Domagala et al., Changes in the microstructure of GaN layers on sapphire upon annealing at high pressure, THIN SOL FI, 350(1-2), 1999, pp. 295-299
Authors:
Suski, T
Perlin, P
Pietraszko, A
Leszczynski, M
Bockowski, M
Grzegory, I
Porowski, S
Citation: T. Suski et al., (GaMg)N - New wide band gap semiconductor, PHYS ST S-A, 176(1), 1999, pp. 343-346
Authors:
Suski, T
Perlin, P
Pietraszko, A
Leszczynski, M
Bockowski, M
Grzegory, I
Porowski, S
Citation: T. Suski et al., (GaMg)N new semiconductor grown at high pressure of nitrogen, J CRYST GR, 207(1-2), 1999, pp. 27-29
Authors:
Prystawko, P
Leszczynski, M
Sliwinski, A
Teisseyre, H
Suski, T
Bockowski, M
Porowski, S
Domagala, J
Kirchner, C
Pelzmann, A
Schauler, M
Kamp, M
Citation: P. Prystawko et al., Epitaxy of ternary nitrides on GaN single crystals, J CRYST GR, 199, 1999, pp. 1061-1065
Authors:
Leszczynski, M
Beaumont, B
Frayssinet, E
Knap, W
Prystawko, P
Suski, T
Grzegory, I
Porowski, S
Citation: M. Leszczynski et al., GaN homoepitaxial layers grown by metalorganic chemical vapor deposition, APPL PHYS L, 75(9), 1999, pp. 1276-1278
Authors:
Romano, LT
McCluskey, MD
Van de Walle, CG
Northrup, JE
Bour, DP
Kneissl, M
Suski, T
Jun, J
Citation: Lt. Romano et al., Phase separation in InGaN multiple quantum wells annealed at high nitrogenpressures, APPL PHYS L, 75(25), 1999, pp. 3950-3952
Authors:
Skierbiszewski, C
Suski, T
Leszczynski, M
Shin, M
Skowronski, M
Bremser, MD
Davis, RF
Citation: C. Skierbiszewski et al., Evidence for localized Si-donor state and its DX-like properties in AlGaN (vol 74, pg 3833, 1999), APPL PHYS L, 75(20), 1999, pp. 3225A-3225A
Authors:
Saarinen, K
Nissila, J
Hautojarvi, P
Likonen, J
Suski, T
Grzegory, I
Lucznik, B
Porowski, S
Citation: K. Saarinen et al., The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals, APPL PHYS L, 75(16), 1999, pp. 2441-2443
Authors:
Skierbiszewski, C
Suski, T
Leszczynski, M
Shin, M
Skowronski, M
Bremser, MD
Davis, RF
Citation: C. Skierbiszewski et al., Evidence for localized Si-donor state and its metastable properties in AlGaN, APPL PHYS L, 74(25), 1999, pp. 3833-3835
Authors:
Prystawko, P
Leszczynski, M
Beaumont, B
Gibart, P
Frayssinet, E
Knap, W
Wisniewski, P
Bockowski, M
Suski, T
Porowski, S
Citation: P. Prystawko et al., Doping of homoepitaxial GaN layers, PHYS ST S-B, 210(2), 1998, pp. 437-443