Authors: Li, HF Dimitrijev, S Sweatman, D Harrison, HB

Citation: Hf. Li et al., Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors, J ELEC MAT, 29(8), 2000, pp. 1027-1032

Authors: Li, HF Dimitrijev, S Sweatman, D Harrison, HB

Citation: Hf. Li et al., Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC, MICROEL REL, 40(2), 2000, pp. 283-286

Authors: Rosa, MA Ngo, NQ Sweatman, D Dimitrijev, S Harrison, HB

Citation: Ma. Rosa et al., Self-alignment of optical fibers with optical quality end-polished siliconrib waveguides using wet chemical micromachining techniques, IEEE S T QU, 5(5), 1999, pp. 1249-1254

Authors: Tanner, P Dimitrijev, S Li, HF Sweatman, D Prince, KE Harrison, HB

Citation: P. Tanner et al., SIMS analysis of nitrided oxides grown on 4H-SiC, J ELEC MAT, 28(2), 1999, pp. 109-111

Authors: Li, HF Dimitrijev, S Sweatman, D Harrison, HB Tanner, P Feil, B

Citation: Hf. Li et al., Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-rayphotoelectron spectroscopy, J APPL PHYS, 86(8), 1999, pp. 4316-4321