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Results: 1-8 |
Results: 8
Characterization of free-standing hydride vapor phase epitaxy GaN
Authors: Jasinski, J Swider, W Liliental-Weber, Z Visconti, P Jones, KM Reshchikov, MA Yun, F Morkoc, H Park, SS Lee, KY
Citation: J. Jasinski et al., Characterization of free-standing hydride vapor phase epitaxy GaN, APPL PHYS L, 78(16), 2001, pp. 2297-2299
Effect of the doping and the Al content on the microstructure and morphology of thin AlxGa1-xN layers grown by MOCVD.
Authors: Mazur, JH Benamara, M Liliental-Weber, Z Swider, W Washburn, J Eiting, CJ Dupuis, RD
Citation: Jh. Mazur et al., Effect of the doping and the Al content on the microstructure and morphology of thin AlxGa1-xN layers grown by MOCVD., MRS I J N S, 5, 2000, pp. NIL_252-NIL_257
The role of the multi buffer layer technique on the structural quality of GaN
Authors: Benamara, M Liliental-Weber, Z Mazur, JH Swider, W Washburn, J Iwaya, M Akasaki, I Amano, H
Citation: M. Benamara et al., The role of the multi buffer layer technique on the structural quality of GaN, MRS I J N S, 5, 2000, pp. NIL_341-NIL_346
Mg segregation, difficulties of P-doping in GaN
Authors: Liliental-Weber, Z Benamara, M Swider, W Washburn, J Grzegory, I Porowski, S Dupuis, RD Eiting, CJ
Citation: Z. Liliental-weber et al., Mg segregation, difficulties of P-doping in GaN, MRS I J N S, 5, 2000, pp. NIL_430-NIL_435
Study of high-quality GaN grown by OMVPE using an intermediate layer
Authors: Benamara, M Liliental-Weber, Z Kellermann, S Swider, W Washburn, J Mazur, J Bourret-Courchesne, ED
Citation: M. Benamara et al., Study of high-quality GaN grown by OMVPE using an intermediate layer, J CRYST GR, 218(2-4), 2000, pp. 447-450
Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN
Authors: Lim, SH Swider, W Washburn, J Liliental-Weber, Z
Citation: Sh. Lim et al., Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN, J APPL PHYS, 88(11), 2000, pp. 6364-6368
Ordering in bulk GaN : Mg samples: defects caused by Mg doping
Authors: Liliental-Weber, Z Benamara, M Swider, W Washburn, J Grzegory, I Porowski, S Dupuis, RD Eiting, CJ
Citation: Z. Liliental-weber et al., Ordering in bulk GaN : Mg samples: defects caused by Mg doping, PHYSICA B, 274, 1999, pp. 124-129
Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition
Authors: Liliental-Weber, Z Benamara, M Swider, W Washburn, J Grzegory, I Porowski, S Lambert, DJH Eiting, CJ Dupuis, RD
Citation: Z. Liliental-weber et al., Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition, APPL PHYS L, 75(26), 1999, pp. 4159-4161
Risultati: 1-8 |