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Results: 1-25/26
Authors:
TABE M
YAMAMOTO T
NAGASAWA T
MURAKAMI K
Citation: M. Tabe et al., SI PILLAR FORMATION AND HEIGHT CONTROL BY FURNACE OXIDATION OF THE SI(111) SURFACE WITH ULTRA-SMALL SIN NUCLEI, JPN J A P 1, 37(3B), 1998, pp. 1576-1579
Authors:
TABE M
TERAO Y
ASAHI N
AMEMIYA Y
Citation: M. Tabe et al., PHOTOIRRADIATION EFFECTS IN A SINGLE-ELECTRON TUNNEL JUNCTION ARRAY, IEICE transactions on electronics, E81C(1), 1998, pp. 36-41
Authors:
YAMAGUCHI T
NASU M
JIANG ZT
TABE M
KANDA Y
Citation: T. Yamaguchi et al., SPECTROELLIPSOMETRIC CHARACTERIZATION OF SIMOX WITH NANOMETER-THICK TOP SI LAYERS, Thin solid films, 313, 1998, pp. 264-269
Authors:
TABE M
ASAHI N
AMEMIYA Y
TERAO Y
Citation: M. Tabe et al., SIMULATIONS OF RELAXATION PROCESSES FOR NONEQUILIBRIUM ELECTRON DISTRIBUTIONS IN 2-DIMENSIONAL TUNNEL JUNCTION ARRAYS, JPN J A P 1, 36(6B), 1997, pp. 4176-4180
Authors:
KURIHARA N
TATSUMI J
ARAI F
TAKENOUCHI O
MANABE K
TABE M
HAZATO A
GAO Q
ISHIZUKA S
Citation: N. Kurihara et al., NOVEL 1-ALPHA,25-DIHYDROXYVITAMIN D(3)26,23-LACTONE ANALOGS STIMULATEOSTEOCLAST FORMATION BUT INHIBIT OSTEOCLAST FORMATION INDUCED BY OSTEOTROPIC FACTORS, Journal of bone and mineral research, 12, 1997, pp. 400-400
Authors:
TABE M
YAMAMOTO T
TERAO Y
Citation: M. Tabe et al., NITRIDATION AND SUBSEQUENT OXIDATION PROCESS OF SI(111) AND SI(100) SURFACES FOR HIGH-DENSITY SI PILLAR FORMATION, Applied surface science, 117, 1997, pp. 131-135
Authors:
YAMAGUCHI T
JAYATISSA AH
AOYAMA M
TABE M
Citation: T. Yamaguchi et al., DETERMINATION OF OPTICAL-PROPERTIES OF AMORPHOUS AND CRYSTALLINE THIN-FILMS BY SPECTROELLIPSOMETRY, Applied surface science, 114, 1997, pp. 493-498
Authors:
TABE M
YAMAMOTO T
Citation: M. Tabe et T. Yamamoto, INITIAL-STAGES OF NITRIDATION OF SI(111) SURFACES - X-RAY PHOTOELECTRON-SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY STUDIES, Surface science, 376(1-3), 1997, pp. 99-112
Authors:
KAGESHIMA H
TABE M
Citation: H. Kageshima et M. Tabe, THEORETICAL CALCULATION OF CORE-LEVEL SHIFTS FOR O SI(111) SURFACES/, Surface science, 351(1-3), 1996, pp. 53-63
Authors:
ONO Y
TAKAHASHI Y
HORIGUCHI S
MURASE K
TABE M
Citation: Y. Ono et al., ELECTRON-TUNNELING FROM THE EDGE OF THIN SINGLE-CRYSTAL SI LAYERS THROUGH SIO2 FILM, Journal of applied physics, 80(8), 1996, pp. 4450-4457
Authors:
TABE M
YAMAMOTO T
Citation: M. Tabe et T. Yamamoto, NANOMETER-SCALE LOCAL OXIDATION OF SILICON USING SILICON-NITRIDE ISLANDS FORMED IN THE EARLY STAGES OF NITRIDATION, Applied physics letters, 69(15), 1996, pp. 2222-2224
Authors:
ONO Y
NAGASE M
TABE M
TAKAHASHI Y
Citation: Y. Ono et al., THERMAL AGGLOMERATION OF THIN SINGLE-CRYSTAL SI ON SIO2 IN VACUUM, JPN J A P 1, 34(4A), 1995, pp. 1728-1735
Authors:
TAKAHASHI Y
FURUTA T
ONO Y
ISHIYAMA T
TABE M
Citation: Y. Takahashi et al., PHOTOLUMINESCENCE FROM A SILICON QUANTUM-WELL FORMED ON SEPARATION BYIMPLANTED OXYGEN SUBSTRATE, JPN J A P 1, 34(2B), 1995, pp. 950-954
Authors:
HORIGUCHI S
NAKAJIMA Y
TAKAHASHI Y
TABE M
Citation: S. Horiguchi et al., ENERGY EIGENVALUES AND QUANTIZED CONDUCTANCE VALUES OF ELECTRONS IN SI QUANTUM WIRES ON (100) PLANE, JPN J A P 1, 34(10), 1995, pp. 5489-5498
Authors:
TABE M
Citation: M. Tabe, THERMAL NITRIDATION OF SI(111) SURFACES WITH N-2 MOLECULES STUDIED BYX-RAY PHOTOELECTRON-SPECTROSCOPY, JPN J A P 2, 34(10B), 1995, pp. 1375-1378
Authors:
OKAMOTO M
TABE M
FUJII T
TANAKA T
Citation: M. Okamoto et al., ASYMMETRIC ISOPROPYLATION OF STEROIDAL 24-ALDEHYDES FOR THE SYNTHESISOF 24(R)-HYDROXYCHOLESTEROL, Tetrahedron : asymmetry, 6(3), 1995, pp. 767-778
Authors:
MURASE K
TAKAHASHI Y
NAKAJIMA Y
NAMATSU H
NAGASE M
KURIHARA K
IWADATE K
HORIGUCHI S
TABE M
IZUMI K
Citation: K. Murase et al., TRANSPORT-PROPERTIES OF SILICON NANOSTRUCTURES FABRICATED ON SIMOX SUBSTRATES, Microelectronic engineering, 28(1-4), 1995, pp. 399-405
Authors:
TAKAHASHI Y
NAGASE M
NAMATSU H
KURIHARA K
IWDATE K
NAKAJIMA K
HORIGUCHI S
MURASE K
TABE M
Citation: Y. Takahashi et al., FABRICATION TECHNIQUE FOR SI SINGLE-ELECTRON TRANSISTOR OPERATING AT ROOM-TEMPERATURE, Electronics Letters, 31(2), 1995, pp. 136-137
Authors:
FUJIWARA A
TAKAHASHI Y
MURASE K
TABE M
Citation: A. Fujiwara et al., TIME-RESOLVED MEASUREMENT OF SINGLE-ELECTRON TUNNELING IN A SI SINGLE-ELECTRON TRANSISTOR WITH SATELLITE SI ISLANDS, Applied physics letters, 67(20), 1995, pp. 2957-2959
Authors:
KAGESHIMA H
ONO Y
TABE M
OHNO T
Citation: H. Kageshima et al., ORIGIN OF DARK REGIONS IN SCANNING-TUNNELING-MICROSCOPY IMAGES FORMEDBY THERMAL-OXIDATION OF SI(111) SURFACE, JPN J A P 1, 33(7A), 1994, pp. 4070-4074
Authors:
KADOTA H
TABE M
AONUMA T
MOURI H
NISHIGUCHI K
Citation: H. Kadota et al., APPLICATION OF ELECTRONICALLY CONTROLLED SUSPENSION TO THE ONE-BOX CAR, International journal of vehicle design, 15(3-5), 1994, pp. 291-300
Authors:
TAKAHASHI Y
ISHIYAMA T
TABE M
Citation: Y. Takahashi et al., COUNTER-OXIDATION OF SUPERFICIAL SI IN SINGLE-CRYSTALLINE SI ON SIO2 STRUCTURE, Applied physics letters, 65(23), 1994, pp. 2987-2989
Authors:
NAKAJIMA Y
TAKAHASHI Y
HORIGUCHI S
IWADATE K
NAMATSU H
KURIHARA K
TABE M
Citation: Y. Nakajima et al., FABRICATION OF A SILICON QUANTUM-WIRE SURROUNDED BY SILICON DIOXIDE AND ITS TRANSPORT-PROPERTIES, Applied physics letters, 65(22), 1994, pp. 2833-2835
Authors:
OMURA Y
HORIGUCHI S
TABE M
KISHI K
Citation: Y. Omura et al., QUANTUM-MECHANICAL EFFECTS ON THE THRESHOLD VOLTAGE OF ULTRATHIN-SOI NMOSFETS, IEEE electron device letters, 14(12), 1993, pp. 569-571
Authors:
ONO Y
TABE M
KAGESHIMA H
Citation: Y. Ono et al., SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF THERMAL OXIDE-GROWTH ON SI(111)7X7 SURFACES, Physical review. B, Condensed matter, 48(19), 1993, pp. 14291-14300