Citation: R. Gunnella et al., X-RAY-ABSORPTION SPECTROSCOPY STUDY OF ATOMIC-STRUCTURE OF EPITAXIAL ERSI1.7(0001) ON SI(111), Physical review. B, Condensed matter, 57(7), 1998, pp. 4154-4159
Authors:
HAFIDI K
IJDIYAOU Y
AZIZAN M
AMEZIANE EL
OUTZOURHIT A
TAN TAN
BRUNEL M
Citation: K. Hafidi et al., INTERACTION OF OXYGEN WITH (ER- FORMATION OF ERBIUM PYROSILICATE ER2SI2O7(SI) ), Applied surface science, 108(2), 1997, pp. 251-256
Citation: P. Muret et al., UNPINNING OF THE FERMI-LEVEL AT ERBIUM SILICIDE SILICON INTERFACES, Physical review. B, Condensed matter, 56(15), 1997, pp. 9286-9289
Authors:
MARTINGAGO JA
VEUILLEN JY
CASADO C
TAN TAN
Citation: Ja. Martingago et al., SURFACE CHARACTER IN THE EXPERIMENTAL FERMI-SURFACE OF EPITAXIAL ERSI1.7(0001) BY PHOTOEMISSION SPECTROSCOPY, Physical review. B, Condensed matter, 55(8), 1997, pp. 5129-5135
Authors:
MARTINGAGO JA
VEUILLEN JY
CASADO C
TAN TAN
Citation: Ja. Martingago et al., EXPERIMENTAL FERMI-SURFACE DETERMINATION OF EPITAXIAL ERSI1.7(0001) ON SI(111), Surface science, 377(1-3), 1997, pp. 172-176
Authors:
KENNOU S
LADAS S
GRIMALDI MG
TAN TAN
VEUILLEN JY
Citation: S. Kennou et al., OXIDATION OF THIN ERBIUM AND ERBIUM SILICIDE OVERLAYERS IN CONTACT WITH SILICON-OXIDE FILMS THERMALLY GROWS ON SILICON, Applied surface science, 102, 1996, pp. 142-146
Citation: I. Ali et al., PROPERTIES OF SEMICONDUCTING RHENIUM SILICIDE THIN-FILMS GROWN EPITAXIALLY ON SILICON(111), Applied surface science, 102, 1996, pp. 147-150
Authors:
IJDIYAOU Y
HAFIDI K
AZIZAN M
AMEZIANE EL
PATRAT G
BRUNEL M
ORTEGA L
TAN TAN
Citation: Y. Ijdiyaou et al., THE FORMATION OF SPUTTERED TA A-SI AND A-SI/TA INTERFACES IN A-SI/TA/A-SI/C-SI STRUCTURE/, Thin solid films, 266(2), 1995, pp. 224-228
Authors:
TUILIER MH
PIRRI C
WETZEL P
GEWINNER G
VEUILLEN JY
TAN TAN
Citation: Mh. Tuilier et al., ATOMIC-STRUCTURE OF EPITAXIAL ER SILICIDES GROWN ON SI(111) STUDIED BY SURFACE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE, Surface science, 309, 1994, pp. 710-715
Citation: Jy. Veuillen et al., GROWTH OF SILICON THIN-FILMS ON ERBIUM SILICIDE BY SOLID-PHASE EPITAXY, Journal of applied physics, 75(1), 1994, pp. 223-226