Citation: Dy. Xu et al., TIME-DEPENDENT SOLUTION OF A FULL HYDRODYNAMIC MODEL INCLUDING CONVECTIVE TERMS AND VISCOUS EFFECT, VLSI design (Print), 6(1-4), 1998, pp. 173-176
Authors:
DUVILLE B
BUCCHINI D
TANG TW
JAMI J
PALDI A
Citation: B. Duville et al., IMPRINTING AT THE MOUSE INS2 LOCUS - EVIDENCE FOR CIS-ALLELIC AND TRANS-ALLELIC INTERACTIONS, Genomics, 47(1), 1998, pp. 52-57
Citation: Tw. Tang et J. Nam, A SIMPLIFIED IMPACT IONIZATION MODEL-BASED ON THE AVERAGE ENERGY OF HOT-ELECTRON SUBPOPULATION, IEEE electron device letters, 19(6), 1998, pp. 201-203
Citation: X. Zhou et al., NUMERICAL INVESTIGATION OF SUBPICOSECOND ELECTRICAL PULSE GENERATION BY EDGE ILLUMINATION OF SILICON TRANSMISSION-LINE GAPS, IEEE journal of quantum electronics, 34(1), 1998, pp. 171-178
Citation: Mk. Ieong et Tw. Tang, INFLUENCE OF HYDRODYNAMIC MODELS ON THE PREDICTION OF SUBMICROMETER DEVICE CHARACTERISTICS, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2242-2251
Citation: Tw. Tang et Mk. Ieong, DISCRETIZATION OF FLUX DENSITIES IN DEVICE SIMULATIONS USING OPTIMUM ARTIFICIAL DIFFUSIVITY, IEEE transactions on computer-aided design of integrated circuits and systems, 14(11), 1995, pp. 1309-1315
Citation: H. Hjelmgren et Tw. Tang, THERMIONIC EMISSION IN A HYDRODYNAMIC MODEL FOR HETEROJUNCTION STRUCTURES, Solid-state electronics, 37(9), 1994, pp. 1649-1657
Authors:
ABRAMO A
BAUDRY L
BRUNETTI R
CASTAGNE R
CHAREF M
DESSENNE F
DOLLFUS P
DUTTON R
ENGL WL
FAUQUEMBERGUE R
FIEGNA C
FISCHETTI MV
GALDIN S
GOLDSMAN N
HACKEL M
HAMAGUCHI C
HESS K
HENNACY K
HESTO P
HIGMAN JM
IIZUKA T
JUNGEMANN C
KAMAKURA Y
KOSINA H
KUNIKIYO T
LAUX SE
LIM HC
MAZIAR C
MIZUNO H
PEIFER HJ
RAMASWAMY S
SANO N
SCORBOHACI PG
SELBERHERR S
TAKENAKA M
TANG TW
TANIGUCHI K
THOBEL JL
THOMA R
TOMIZAWA K
TOMIPZAWA M
VOGELSANG T
WANG SL
WANG XL
YAO CS
YODER PD
YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
Citation: Pg. Scrobohaci et Tw. Tang, MODELING OF THE HOT-ELECTRON SUBPOPULATION AND ITS APPLICATION TO IMPACT IONIZATION IN SUBMICRON SILICON DEVICES .1. TRANSPORT-EQUATIONS, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1197-1205
Citation: Pg. Scrobohaci et Tw. Tang, MODELING OF THE HOT-ELECTRON SUBPOPULATION AND ITS APPLICATION TO IMPACT IONIZATION IN SUBMICRON SILICON DEVICES .2. NUMERICAL-SOLUTIONS, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1206-1212
Citation: Jg. Adams et al., MONTE-CARLO SIMULATION OF NOISE IN GAAS SEMICONDUCTOR-DEVICES, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 575-581
Authors:
WOOLARD DL
TIAN H
LITTLEJOHN MA
KIM KW
TREW RJ
LEONG MK
TANG TW
Citation: Dl. Woolard et al., CONSTRUCTION OF HIGHER-MOMENT TERMS IN THE HYDRODYNAMIC ELECTRON-TRANSPORT MODEL, Journal of applied physics, 74(10), 1993, pp. 6197-6207