Authors:
LI Y
KILNER JA
CHATER RJ
NEJIM A
HEMMENT PLF
TATE TJ
Citation: Y. Li et al., AN INVESTIGATION OF AS-IMPLANTED MATERIAL FORMED BY HIGH-DOSE 40 KEV OXYGEN IMPLANTATION INTO SILICON AT 550-DEGREES-C, Journal of applied physics, 74(1), 1993, pp. 82-85
