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Authors: LOHEAC JL RAOULT F BONNAUD O TAURIN M
Citation: Jl. Loheac et al., ANALYSIS FOR THE RELIABILITY OF THE INTRINSIC BASE ION-IMPLANTATION OF A 3 GHZ I(2)L BIPOLAR PROCESS FROM THE MEASURE OF INTEGRATED RESISTANCES - FROM THE RESULTS, SETTING OF RULES FOR AN EXPERT-SYSTEM, Microelectronics and reliability, 37(1), 1997, pp. 179-186
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