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Results:
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Results: 5
OPTICAL MODULATION WITH A RESONANT-TUNNELING DIODE
Authors:
MCMEEKIN SG TAYLOR MRS IRONSIDE CN
Citation:
Sg. Mcmeekin et al., OPTICAL MODULATION WITH A RESONANT-TUNNELING DIODE, IEE proceedings. Optoelectronics, 143(1), 1996, pp. 12-16
GATE RECESS ENGINEERING OF PSEUDOMORPHIC IN0.30GAAS GAAS HEMTS/
Authors:
CAMERON NI MURAD S MCLELLAND H ASENOV A TAYLOR MRS HOLLAND MC BEAUMONT SP
Citation:
Ni. Cameron et al., GATE RECESS ENGINEERING OF PSEUDOMORPHIC IN0.30GAAS GAAS HEMTS/, Electronics Letters, 32(8), 1996, pp. 770-772
LOW-FREQUENCY NOISE OF SELECTIVELY DRY-ETCH GATE-RECESSED GAAS-MESFETS
Authors:
THAYNE IG ELGAID K TAYLOR MRS HOLLAND MC FAIRBAIRN S CAMERON NI BEAUMONT SP BELLE G
Citation:
Ig. Thayne et al., LOW-FREQUENCY NOISE OF SELECTIVELY DRY-ETCH GATE-RECESSED GAAS-MESFETS, Electronics Letters, 31(4), 1995, pp. 324-326
FRANZ-KELDYSH EFFECT IN AN OPTICAL WAVE-GUIDE CONTAINING A RESONANT-TUNNELING DIODE
Authors:
MCMEEKIN SG TAYLOR MRS VOGELE B STANLEY CR IRONSIDE CN
Citation:
Sg. Mcmeekin et al., FRANZ-KELDYSH EFFECT IN AN OPTICAL WAVE-GUIDE CONTAINING A RESONANT-TUNNELING DIODE, Applied physics letters, 65(9), 1994, pp. 1076-1078
SELECTIVELY DRY GATE RECESSED GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, HIGH-ELECTRON-MOBILITY TRANSISTORS, AND MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS
Authors:
CAMERON NI FERGUSON S TAYLOR MRS BEAUMONT SP HOLLAND M TRONCHE C SOULARD M LADBROOKE PH
Citation:
Ni. Cameron et al., SELECTIVELY DRY GATE RECESSED GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, HIGH-ELECTRON-MOBILITY TRANSISTORS, AND MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2244-2248
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