Authors: LU GQ BORA M TEDDER LL RUBLOFF GW

Citation: Gq. Lu et al., INTEGRATED DYNAMIC SIMULATION OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF POLYSILICON, IEEE transactions on semiconductor manufacturing, 11(1), 1998, pp. 63-74

Authors: CHOWDHURY AI READ WW RUBLOFF GW TEDDER LL PARSONS GN

Citation: Ai. Chowdhury et al., REAL-TIME PROCESS SENSING AND METROLOGY IN AMORPHOUS AND SELECTIVE-AREA SILICON PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING IN-SITU MASS-SPECTROMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 127-132

Authors: TEDDER LL RUBLOFF GW CONAGHAN BF PARSONS GN

Citation: Ll. Tedder et al., DYNAMIC RATE AND THICKNESS METROLOGY DURING POLY-SI RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION FROM SIH4 USING REAL-TIME IN-SITU MASS-SPECTROMETRY (VOL 14, PG 267, 1996), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2680-2680

Authors: TEDDER LL RUBLOFF GW COHAGHAN BF PARSONS GN

Citation: Ll. Tedder et al., DYNAMIC RATE AND THICKNESS METROLOGY DURING POLY-SI RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION FROM SIH4 USING REAL-TIME IN-SITU MASS-SPECTROMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 267-270

Authors: TEDDER LL RUBLOFF GW SHAREEF I ANDERLE M KIM DH PARSONS GN

Citation: Ll. Tedder et al., REAL-TIME PROCESS AND PRODUCT DIAGNOSTICS IN RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING IN-SITU MASS-SPECTROMETRIC SAMPLING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1924-1927

Authors: ADAMS DP TEDDER LL MAYER TM SWARTZENTRUBER BS CHASON E

Citation: Dp. Adams et al., INITIAL-STAGES OF FE CHEMICAL-VAPOR-DEPOSITION ONTO SI(100), Physical review letters, 74(25), 1995, pp. 5088-5091