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Results:
1-9
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Results: 9
Authors:
PENDHARKAR SV
RESNICK DJ
DAUKSHER WJ
CUMMINGS KD
TEPERMEISTER I
CONNER WT
Citation: Sv. Pendharkar et al., OPTIMIZATION OF AN ELECTRON-CYCLOTRON-RESONANCE ETCH PROCESS USING FULL WAFER CHARGE-COUPLED-DEVICE INTERFEROMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 816-819
Authors:
LEE JTC
BLAYO N
TEPERMEISTER I
KLEMENS FP
MANSFIELD WM
IBBOTSON DE
Citation: Jtc. Lee et al., PLASMA-ETCHING PROCESS-DEVELOPMENT USING IN-SITU OPTICAL-EMISSION ANDELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3283-3290
Authors:
LEE JTC
LAYADI N
GUINN KV
MAYNARD HL
KLEMENS FP
IBBOTSON DE
TEPERMEISTER I
EGAN PO
RICHARDSON RA
Citation: Jtc. Lee et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .5. POLYSILICON ETCHING RATE, UNIFORMITY, PROFILE CONTROL, AND BULK PLASMA PROPERTIES IN A HELICAL RESONATOR PLASMA SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2510-2518
Authors:
TEPERMEISTER I
CONNER WT
ALZABEN T
BARNARD H
GEHLERT K
SCIPIONE D
Citation: I. Tepermeister et al., IN-SITU MONITORING OF PRODUCT WAFERS, Solid state technology, 39(3), 1996, pp. 63
Authors:
TEPERMEISTER I
BLAYO N
KLEMENS FP
IBBOTSON DE
GOTTSCHO RA
LEE JTC
SAWIN HH
Citation: I. Tepermeister et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .1. ETCHING RATE, UNIFORMITY, AND PROFILE CONTROL IN A HELICON AND A MULTIPLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2310-2321
Authors:
TEPERMEISTER I
IBBOTSON DE
LEE JTC
SAWIN HH
Citation: I. Tepermeister et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .2. LANGMUIR PROBE STUDIES OF A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2322-2332
Authors:
GIBSON GW
SAWIN HH
TEPERMEISTER I
IBBOTSON DE
LEE JTC
Citation: Gw. Gibson et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .3. ION ENERGY-DISTRIBUTION FUNCTIONS FOR A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2333-2341
Authors:
BLAYO N
TEPERMEISTER I
BENTON JL
HIGASHI GS
BOONE T
ONUOHA A
KLEMENS FP
IBBOTSON DE
SAWIN HH
Citation: N. Blayo et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .4. PLASMA-INDUCED DAMAGE IN A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1340-1350
Authors:
GRAY DC
TEPERMEISTER I
SAWIN HH
Citation: Dc. Gray et al., PHENOMENOLOGICAL MODELING OF ION-ENHANCED SURFACE KINETICS IN FLUORINE-BASED PLASMA-ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1243-1257
Risultati:
1-9
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