Authors:
BROWN KM
LINFIELD EH
JONES GAC
RITCHIE DA
THOMPSON JH
Citation: Km. Brown et al., FABRICATION OF A NOVEL SPLIT-BACKGATE TRANSISTOR BY IN-SITU FOCUSED ION-BEAM LITHOGRAPHY AND MOLECULAR-BEAM EPITAXIAL REGROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2493-2496
Authors:
THOMPSON JH
JONES GAC
RITCHIE DA
LINFIELD EH
HOULTON M
SMITH GW
WHITEHOUSE CR
Citation: Jh. Thompson et al., SELECTIVE AREA 2-DIMENSIONAL ELECTRON-GAS STRUCTURES AND INSITU OHMICCONTACTS PATTERNED BY FOCUSED ION-BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH, Journal of crystal growth, 127(1-4), 1993, pp. 732-736
Authors:
THOMPSON JH
JONES GAC
RITCHIE DA
LINFIELD EH
CHURCHILL AC
SMITH GW
HOULTON M
LEE D
WHITEHOUSE CR
Citation: Jh. Thompson et al., EFFECT OF ION ENERGY ON SN DONOR ACTIVATION AND DEFECT PRODUCTION IN MOLECULAR-BEAM EPITAXY GAAS DOPED WITH SN IONS DURING GROWTH, Journal of applied physics, 74(7), 1993, pp. 4375-4381