Authors: GLAZOV VM TIMOSHINA GG MIKHAILOVA MS POTEMKIN AY

Citation: Vm. Glazov et al., POSSIBILITY OF INCREASING THE THERMAL-STABILITY OF SI BY DOPING WITH TRANSITION OR RARE-EARTH-METALS, Semiconductors, 31(9), 1997, pp. 875-878

Authors: GLAZOV VM PASHINKIN AS MIKHAILOVA MS TIMOSHINA GG

Citation: Vm. Glazov et al., ABNORMAL HEAT-CAPACITY CHANGE DURING SING LE-CRYSTAL SILICON HEATING DUE TO STRUCTURAL TRANSITION PROCESSES, Doklady Akademii nauk. Rossijskaa akademia nauk, 354(1), 1997, pp. 59-61

Authors: GLAZOV VM TIMOSHINA GG MIKHAILOVA MS

Citation: Vm. Glazov et al., ON THE CHOICE OF DOPANTS ENHANCING THERMAL-STABILITY OF SILICON, Inorganic materials, 33(6), 1997, pp. 539-542

Authors: GLAZOV VM TIMOSHINA GG MIKHAILOVA MS

Citation: Vm. Glazov et al., IMPLANTATION PRINCIPLES SILICON FOR RISE HIS THERMOSTABILITY, Doklady Akademii nauk. Rossijskaa akademia nauk, 347(3), 1996, pp. 352-355

Authors: AKOPYAN RA TIMOSHINA GG

Citation: Ra. Akopyan et Gg. Timoshina, KINETICS AND MECHANISM OF THE RETROGRADE DECOMPOSITION OF GE-PERCENT AL SOLID-SOLUTION(1.15 AT), Inorganic materials, 31(2), 1995, pp. 145-149