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Results: 1-14 |
Results: 14
EMISSIVITY OF LIQUID GERMANIUM IN VISIBLE AND NEAR-INFRARED REGION
Authors: TAKASUKA E TOKIZAKI E TERASHIMA K KIMURA S
Citation: E. Takasuka et al., EMISSIVITY OF LIQUID GERMANIUM IN VISIBLE AND NEAR-INFRARED REGION, Journal of applied physics, 82(5), 1997, pp. 2590-2594
EMISSIVITY OF LIQUID SILICON IN VISIBLE AND INFRARED REGIONS
Authors: TAKASUKA E TOKIZAKI E TERASHIMA K KIMURA S
Citation: E. Takasuka et al., EMISSIVITY OF LIQUID SILICON IN VISIBLE AND INFRARED REGIONS, Journal of applied physics, 81(9), 1997, pp. 6384-6389
INFLUENCE OF HYDROGEN AND OXYGEN ON THE MELT PROPERTIES AND THE CRYSTAL-GROWTH IN SILICON
Authors: IKARI A SASAKI H TOKIZAKI E TERASHIMA K KIMURA S
Citation: A. Ikari et al., INFLUENCE OF HYDROGEN AND OXYGEN ON THE MELT PROPERTIES AND THE CRYSTAL-GROWTH IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 42-45
TEMPERATURE-DEPENDENCE OF THE VISCOSITY OF MOLTEN SILICON MEASURED BYTHE OSCILLATING CUP METHOD
Authors: SASAKI H TOKIZAKI E HUANG XM TERASHIMA K KIMURA S
Citation: H. Sasaki et al., TEMPERATURE-DEPENDENCE OF THE VISCOSITY OF MOLTEN SILICON MEASURED BYTHE OSCILLATING CUP METHOD, JPN J A P 1, 34(7A), 1995, pp. 3432-3436
INFLUENCE OF ATMOSPHERE ON MOLTEN SILICON DENSITY
Authors: IKARI A SASAKI H TOKIZAKI E TERASHIMA K KIMURA S
Citation: A. Ikari et al., INFLUENCE OF ATMOSPHERE ON MOLTEN SILICON DENSITY, JPN J A P 2, 34(8B), 1995, pp. 1017-1019
DIRECT MEASUREMENT OF SPECTRAL EMISSIVITY OF LIQUID SI IN THE RANGE OF VISIBLE-LIGHT
Authors: TAKASUKA E TOKIZAKI E TERASHIMA K KIMURA S
Citation: E. Takasuka et al., DIRECT MEASUREMENT OF SPECTRAL EMISSIVITY OF LIQUID SI IN THE RANGE OF VISIBLE-LIGHT, Applied physics letters, 67(2), 1995, pp. 152-154
DENSITY VARIATION OF MOLTEN SILICON MEASURED BY AN IMPROVED ARCHIMEDEAN METHOD
Authors: SASAKI H TOKIZAKI E TERASHIMA K KIMURA S
Citation: H. Sasaki et al., DENSITY VARIATION OF MOLTEN SILICON MEASURED BY AN IMPROVED ARCHIMEDEAN METHOD, JPN J A P 1, 33(7A), 1994, pp. 3803-3807
EVAPORATION RATES OF OXIDES FROM UNDOPED AND SB-DOPED SI MELTS UNDER ATMOSPHERES OF PURE NE, AR, AND KR
Authors: HUANG XM TERASHIMA K TOKIZAKI E KIMURA S WHITBY E
Citation: Xm. Huang et al., EVAPORATION RATES OF OXIDES FROM UNDOPED AND SB-DOPED SI MELTS UNDER ATMOSPHERES OF PURE NE, AR, AND KR, JPN J A P 1, 33(7A), 1994, pp. 3808-3812
ANALYSIS OF DEPOSITS EVAPORATED FROM SB-DOPED SI MELTS
Authors: HUANG XM TERASHIMA K TOKIZAKI E SASAKI H KIMURA S
Citation: Xm. Huang et al., ANALYSIS OF DEPOSITS EVAPORATED FROM SB-DOPED SI MELTS, JPN J A P 1, 33(6A), 1994, pp. 3305-3309
EVAPORATION OF OXYGEN-BEARING SPECIES FROM SI MELT AND INFLUENCE OF SB ADDITION
Authors: HUANG XM TERASHIMA K SASAKI H TOKIZAKI E ANZAI Y KIMURA S
Citation: Xm. Huang et al., EVAPORATION OF OXYGEN-BEARING SPECIES FROM SI MELT AND INFLUENCE OF SB ADDITION, JPN J A P 1, 33(4A), 1994, pp. 1717-1722
DENSITY VARIATIONS IN MOLTEN SILICON DEPENDENT ON ITS THERMAL HISTORY
Authors: SASAKI H TOKIZAKI E TERASHIMA K KIMURA S
Citation: H. Sasaki et al., DENSITY VARIATIONS IN MOLTEN SILICON DEPENDENT ON ITS THERMAL HISTORY, JPN J A P 1, 33(11), 1994, pp. 6078-6081
DENSITY-MEASUREMENT OF MOLTEN SILICON BY AN IMPROVED ARCHIMEDIAN METHOD
Authors: SASAKI H TOKIZAKI E TERASHIMA K KIMURA S
Citation: H. Sasaki et al., DENSITY-MEASUREMENT OF MOLTEN SILICON BY AN IMPROVED ARCHIMEDIAN METHOD, Journal of crystal growth, 139(3-4), 1994, pp. 225-230
FORMATION OF INTERFACIAL PHASES BETWEEN SILICA AND UNDOPED OR ANTIMONY-DOPED SILICON MELTS
Authors: HUANG XM TERASHIMA K ANZAI Y TOKIZAKI E SASAKI H KIMURA S
Citation: Xm. Huang et al., FORMATION OF INTERFACIAL PHASES BETWEEN SILICA AND UNDOPED OR ANTIMONY-DOPED SILICON MELTS, Applied physics letters, 64(17), 1994, pp. 2261-2263
OXYGEN SOLUBILITIES IN SI MELT - INFLUENCE OF SB ADDITION
Authors: HUANG XM TERASHIMA K SASAKI H TOKIZAKI E KIMURA S
Citation: Xm. Huang et al., OXYGEN SOLUBILITIES IN SI MELT - INFLUENCE OF SB ADDITION, JPN J A P 1, 32(9A), 1993, pp. 3671-3674
Risultati: 1-14 |