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Results: 1-9 |
Results: 9
DELIVERY OF AMINOPEPTIDASE-N TO BILE CANALICULI CORRELATES WITH SPECIFIC TRANSCYTOSIS ACTIVITIES IN HUMAN HEPATOMA-CELL LINES
Authors: YANG CS LIAN WN CHEN YJ WU TW YU PM TSAI JW LIN CH
Citation: Cs. Yang et al., DELIVERY OF AMINOPEPTIDASE-N TO BILE CANALICULI CORRELATES WITH SPECIFIC TRANSCYTOSIS ACTIVITIES IN HUMAN HEPATOMA-CELL LINES, Molecular biology of the cell, 9, 1998, pp. 524-524
MEMBRANE ULTRAFILTRATION IN MULTIPASS HOLLOW-FIBER MODULES
Authors: YEH HM TSAI JW
Citation: Hm. Yeh et Jw. Tsai, MEMBRANE ULTRAFILTRATION IN MULTIPASS HOLLOW-FIBER MODULES, Journal of membrane science, 142(1), 1998, pp. 61-73
THE INSTABILITY CHARACTERISTICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH VARIOUS INTERFACIAL AND BULK DEFECT STATES
Authors: CHENG HC TSAI JW HUANG CY LUO FC TUAN HC
Citation: Hc. Cheng et al., THE INSTABILITY CHARACTERISTICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH VARIOUS INTERFACIAL AND BULK DEFECT STATES, JPN J A P 1, 36(10), 1997, pp. 6226-6229
THE ELECTRICAL CHARACTERISTICS OF THE AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH DUAL INTRINSIC LAYERS
Authors: TSAI JW CHENG HC CHOU A SU FC LUO FC TUAN HC
Citation: Jw. Tsai et al., THE ELECTRICAL CHARACTERISTICS OF THE AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH DUAL INTRINSIC LAYERS, Journal of the Electrochemical Society, 144(8), 1997, pp. 2929-2932
REDUCING THRESHOLD VOLTAGE SHIFTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS BY HYDROGENATING THE GATE NITRIDE PRIOR TO AMORPHOUS-SILICON DEPOSITION
Authors: TSAI JW HUANG CY TAI YH CHENG HC SU FC LUO FC TUAN HC
Citation: Jw. Tsai et al., REDUCING THRESHOLD VOLTAGE SHIFTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS BY HYDROGENATING THE GATE NITRIDE PRIOR TO AMORPHOUS-SILICON DEPOSITION, Applied physics letters, 71(9), 1997, pp. 1237-1239
ENERGY-DEPENDENCE OF THE ELECTRON-CAPTURE CROSS-SECTION OF GAP STATESIN UNDOPED A-SI-H FILMS
Authors: CHEN YE WANG FS TSAI JW CHENG HC
Citation: Ye. Chen et al., ENERGY-DEPENDENCE OF THE ELECTRON-CAPTURE CROSS-SECTION OF GAP STATESIN UNDOPED A-SI-H FILMS, JPN J A P 2, 34(2B), 1995, pp. 268-270
ANOMALOUS BIAS-STRESS-INDUCED UNSTABLE PHENOMENA OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS
Authors: TAI YH TSAI JW CHENG HC SU FC
Citation: Yh. Tai et al., ANOMALOUS BIAS-STRESS-INDUCED UNSTABLE PHENOMENA OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS, Applied physics letters, 67(17), 1995, pp. 2503-2505
INSTABILITY MECHANISMS FOR THE HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH NEGATIVE AND POSITIVE BIAS STRESSES ON THE GATE ELECTRODES
Authors: TAI YH TSAI JW CHENG HC SU FC
Citation: Yh. Tai et al., INSTABILITY MECHANISMS FOR THE HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH NEGATIVE AND POSITIVE BIAS STRESSES ON THE GATE ELECTRODES, Applied physics letters, 67(1), 1995, pp. 76-78
NOVEL STRUCTURE FOR MEASURING THE DENSITY-OF-STATE DISTRIBUTION OF HIGH-RESISTIVITY SEMICONDUCTOR-FILMS BY ISOTHERMAL CAPACITANCE TRANSIENTSPECTROSCOPY
Authors: CHEN YE WANG FS TSAI JW CHENG HC
Citation: Ye. Chen et al., NOVEL STRUCTURE FOR MEASURING THE DENSITY-OF-STATE DISTRIBUTION OF HIGH-RESISTIVITY SEMICONDUCTOR-FILMS BY ISOTHERMAL CAPACITANCE TRANSIENTSPECTROSCOPY, JPN J A P 1, 33(12A), 1994, pp. 6727-6732
Risultati: 1-9 |