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Results: 1-11 |
Results: 11
SPATIAL DISTRIBUTIONS OF NEAR-BAND-GAP UV AND YELLOW EMISSION ON MOCVD GROWN GAN EPIFILMS
Authors: TU LW LEE YC STOCKER D SCHUBERT EF
Citation: Lw. Tu et al., SPATIAL DISTRIBUTIONS OF NEAR-BAND-GAP UV AND YELLOW EMISSION ON MOCVD GROWN GAN EPIFILMS, Physical review. B, Condensed matter, 58(16), 1998, pp. 10696-10699
NEGATIVE PERSISTENT PHOTOCONDUCTIVITY IN II-VI ZNS1-XSEX ZN1-YCDYSE QUANTUM-WELLS/
Authors: LO I CHEN SJ LEE YC TU LW MITCHEL WC AHOUJJA M PERRIN RE TU RC SU YK LAN WH TU SL
Citation: I. Lo et al., NEGATIVE PERSISTENT PHOTOCONDUCTIVITY IN II-VI ZNS1-XSEX ZN1-YCDYSE QUANTUM-WELLS/, Physical review. B, Condensed matter, 57(12), 1998, pp. 6819-6822
YELLOW LUMINESCENCE DEPTH PROFILING ON GAN EPIFILMS USING REACTIVE ION ETCHING
Authors: TU LW LEE YC CHEN SJ LO I STOCKER D SCHUBERT EF
Citation: Lw. Tu et al., YELLOW LUMINESCENCE DEPTH PROFILING ON GAN EPIFILMS USING REACTIVE ION ETCHING, Applied physics letters, 73(19), 1998, pp. 2802-2804
NOVEL GA2O3(GD2O3) PASSIVATION TECHNIQUES TO PRODUCE LOW D-IT OXIDE-GAAS INTERFACES
Authors: HONG M MANNAERTS JP BOWER JE KWO J PASSLACK M HWANG WY TU LW
Citation: M. Hong et al., NOVEL GA2O3(GD2O3) PASSIVATION TECHNIQUES TO PRODUCE LOW D-IT OXIDE-GAAS INTERFACES, Journal of crystal growth, 175, 1997, pp. 422-427
VOLTAGE-GATED K+ CHANNELS CONTAIN MULTIPLE INTERSUBUNIT ASSOCIATION SITES
Authors: TU LW SANTARELLI V SHENG ZF SKACH W PAIN D DEUTSCH C
Citation: Lw. Tu et al., VOLTAGE-GATED K+ CHANNELS CONTAIN MULTIPLE INTERSUBUNIT ASSOCIATION SITES, The Journal of general physiology, 108(2), 1996, pp. 78-78
VOLTAGE-GATED K+ CHANNELS CONTAIN MULTIPLE INTERSUBUNIT ASSOCIATION SITES
Authors: TU LW SANTARELLI V SHENG ZF SKACH W PAIN D DEUTSCH C
Citation: Lw. Tu et al., VOLTAGE-GATED K+ CHANNELS CONTAIN MULTIPLE INTERSUBUNIT ASSOCIATION SITES, The Journal of biological chemistry, 271(31), 1996, pp. 18904-18911
IN-VACUUM CLEAVING AND COATING OF SEMICONDUCTOR-LASER FACETS USING THIN SILICON AND A DIELECTRIC
Authors: TU LW SCHUBERT EF HONG M ZYDZIK GJ
Citation: Lw. Tu et al., IN-VACUUM CLEAVING AND COATING OF SEMICONDUCTOR-LASER FACETS USING THIN SILICON AND A DIELECTRIC, Journal of applied physics, 80(11), 1996, pp. 6448-6451
RECOMBINATION VELOCITY AT OXIDE-GAAS INTERFACES FABRICATED BY IN-SITUMOLECULAR-BEAM EPITAXY
Authors: PASSLACK M HONG M MANNAERTS JP KWO JR TU LW
Citation: M. Passlack et al., RECOMBINATION VELOCITY AT OXIDE-GAAS INTERFACES FABRICATED BY IN-SITUMOLECULAR-BEAM EPITAXY, Applied physics letters, 68(25), 1996, pp. 3605-3607
C-TYPE INACTIVATION OF A VOLTAGE-GATED K+ CHANNEL OCCURS BY A COOPERATIVE MECHANISM
Authors: PANYI G SHENG ZF TU LW DEUTSCH C
Citation: G. Panyi et al., C-TYPE INACTIVATION OF A VOLTAGE-GATED K+ CHANNEL OCCURS BY A COOPERATIVE MECHANISM, Biophysical journal, 69(3), 1995, pp. 896-903
TRUNCATED K-SEQUENCES SPECIFICALLY SUPPRESS LYMPHOCYTE K+ CHANNEL GENE-EXPRESSION( CHANNEL DNA)
Authors: TU LW SANTARELLI V DEUTSCH C
Citation: Lw. Tu et al., TRUNCATED K-SEQUENCES SPECIFICALLY SUPPRESS LYMPHOCYTE K+ CHANNEL GENE-EXPRESSION( CHANNEL DNA), Biophysical journal, 68(1), 1995, pp. 147-156
SUPERIOR OUTPUT LINEARITY OF OPTIMIZED DOUBLE-HETEROSTRUCTURE VERTICAL-CAVITY TOP-EMITTING LASERS
Authors: TU LW SCHUBERT EF WANG YH WEIR BE ZYDZIK GJ CHO AY
Citation: Lw. Tu et al., SUPERIOR OUTPUT LINEARITY OF OPTIMIZED DOUBLE-HETEROSTRUCTURE VERTICAL-CAVITY TOP-EMITTING LASERS, Applied physics letters, 66(18), 1995, pp. 2315-2317
Risultati: 1-11 |