Authors: CHENG HC TSAI JW HUANG CY LUO FC TUAN HC

Citation: Hc. Cheng et al., THE INSTABILITY CHARACTERISTICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH VARIOUS INTERFACIAL AND BULK DEFECT STATES, JPN J A P 1, 36(10), 1997, pp. 6226-6229

Authors: TSAI JW CHENG HC CHOU A SU FC LUO FC TUAN HC

Citation: Jw. Tsai et al., THE ELECTRICAL CHARACTERISTICS OF THE AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH DUAL INTRINSIC LAYERS, Journal of the Electrochemical Society, 144(8), 1997, pp. 2929-2932

Authors: TSAI JW HUANG CY TAI YH CHENG HC SU FC LUO FC TUAN HC

Citation: Jw. Tsai et al., REDUCING THRESHOLD VOLTAGE SHIFTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS BY HYDROGENATING THE GATE NITRIDE PRIOR TO AMORPHOUS-SILICON DEPOSITION, Applied physics letters, 71(9), 1997, pp. 1237-1239