Authors: TYAGI MS YADAV KS

Citation: Ms. Tyagi et Ks. Yadav, CHARACTERIZATION AND MODELING OF LOW-FIELD N-CHANNEL MOSFETS INVERSION-LAYER MOBILITY AT TEMPERATURES ABOVE 300 K, Indian Journal of Pure & Applied Physics, 36(3), 1998, pp. 161-170

Authors: TYAGI MS GUPTA AK

Citation: Ms. Tyagi et Ak. Gupta, MEASUREMENT OF HOLE DIFFUSION LENGTH IN HEAVILY-DOPED N-TYPE SILICON USING SEM, Physica status solidi. a, Applied research, 143(1), 1994, pp. 79-83