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Results: 4
FEASIBILITY OF 250 NM GATE PATTERNING USING I-LINE WITH OPC
Authors:
VANDRIESSCHE V FINDERS J TRITCHKOV A RONSE K VANDENHOVE L TZVIATKOV P
Citation:
V. Vandriessche et al., FEASIBILITY OF 250 NM GATE PATTERNING USING I-LINE WITH OPC, Microelectronic engineering, 42, 1998, pp. 111-115
OPTIMIZING I-LINE LITHOGRAPHY FOR 0.3-MU-M POLY-GATE MANUFACTURING
Authors:
FINDERS J TZVIATKOV P RONSE K VANDENHOVE L
Citation:
J. Finders et al., OPTIMIZING I-LINE LITHOGRAPHY FOR 0.3-MU-M POLY-GATE MANUFACTURING, Solid state technology, 40(3), 1997, pp. 5
OPTICAL PROXIMITY CORRECTION FOR 0.3 MU-M I-LINE LITHOGRAPHY
Authors:
YEN A TZVIATKOV P WONG A JUFFERMANS C JONCKHEERE R JAENEN P GAROFALO J OTTO O RONSE K VANDENHOVE L
Citation:
A. Yen et al., OPTICAL PROXIMITY CORRECTION FOR 0.3 MU-M I-LINE LITHOGRAPHY, Microelectronic engineering, 30(1-4), 1996, pp. 141-144
OPTICALLY ENHANCED-LINE LITHOGRAPHY FOR 0.3-MU-M RANDOM LOGIC APPLICATIONS
Authors:
YEN A TZVIATKOV P GROZEV G
Citation:
A. Yen et al., OPTICALLY ENHANCED-LINE LITHOGRAPHY FOR 0.3-MU-M RANDOM LOGIC APPLICATIONS, Solid state technology, 39(3), 1996, pp. 13
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